Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots

X. Z. Liao, J. Zou, D. J.H. Cockayne, R. Leon, C. Lobo

    Research output: Contribution to journalArticlepeer-review

    85 Citations (Scopus)

    Abstract

    Significant differences in the image features of InxGa1-x As quantum dots (QDs) grown on (001) and vicinal (001) GaAs were seen in [001] on-zone bright-field transmission electron microscope images. Simulated images were obtained by modeling the strain field distribution of the QDs with finite element analysis and then using this model in dynamical electron diffraction contrast simulations. Comparison of the experimental images and the simulated images shows that (i) In segregation exists in the QDs and (ii) the average In content of the QDs is higher than the average In content of the film.

    Original languageEnglish
    Pages (from-to)5148-5151
    Number of pages4
    JournalPhysical Review Letters
    Volume82
    Issue number25
    DOIs
    Publication statusPublished - 1 Jan 1999

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