Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers

S. Marcinkevičius; C. Jagadish; H. H. Tan; M. Kaminska; K. Korona; R. Adomavičius; A. Krotkus

doi:10.1063/1.126017

Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers

S. Marcinkevičius^*, C. Jagadish, H. H. Tan, M. Kaminska, K. Korona, R. Adomavičius, A. Krotkus

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Electrical and dynamical optical characterization of As-ion implanted and annealed GaAs has been performed. Changes of physical properties induced by annealing have been studied in detail by using layers annealed in small steps in the temperature range 500-700°C. The carrier trapping rate increases exponentially with increase of inverse annealing temperature indicating that in ion-implanted GaAs ultrafast carrier capture occurs to the same trapping centers as in low-temperature-grown GaAs. Relatively large resistivity and electron mobility in As-implanted GaAs have been observed after annealing, which shows that this material possesses properties required for a variety of ultrafast optoelectronic applications.

Original language	English
Pages (from-to)	1306-1308
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	10
DOIs	https://doi.org/10.1063/1.126017
Publication status	Published - 6 Mar 2000

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@article{74e93bb4963d492691df449318bcc0de,

title = "Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers",

abstract = "Electrical and dynamical optical characterization of As-ion implanted and annealed GaAs has been performed. Changes of physical properties induced by annealing have been studied in detail by using layers annealed in small steps in the temperature range 500-700°C. The carrier trapping rate increases exponentially with increase of inverse annealing temperature indicating that in ion-implanted GaAs ultrafast carrier capture occurs to the same trapping centers as in low-temperature-grown GaAs. Relatively large resistivity and electron mobility in As-implanted GaAs have been observed after annealing, which shows that this material possesses properties required for a variety of ultrafast optoelectronic applications.",

author = "S. Marcinkevi{\v c}ius and C. Jagadish and Tan, {H. H.} and M. Kaminska and K. Korona and R. Adomavi{\v c}ius and A. Krotkus",

year = "2000",

month = mar,

day = "6",

doi = "10.1063/1.126017",

language = "English",

volume = "76",

pages = "1306--1308",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers

AU - Marcinkevičius, S.

AU - Jagadish, C.

AU - Tan, H. H.

AU - Kaminska, M.

AU - Korona, K.

AU - Adomavičius, R.

AU - Krotkus, A.

PY - 2000/3/6

Y1 - 2000/3/6

N2 - Electrical and dynamical optical characterization of As-ion implanted and annealed GaAs has been performed. Changes of physical properties induced by annealing have been studied in detail by using layers annealed in small steps in the temperature range 500-700°C. The carrier trapping rate increases exponentially with increase of inverse annealing temperature indicating that in ion-implanted GaAs ultrafast carrier capture occurs to the same trapping centers as in low-temperature-grown GaAs. Relatively large resistivity and electron mobility in As-implanted GaAs have been observed after annealing, which shows that this material possesses properties required for a variety of ultrafast optoelectronic applications.

AB - Electrical and dynamical optical characterization of As-ion implanted and annealed GaAs has been performed. Changes of physical properties induced by annealing have been studied in detail by using layers annealed in small steps in the temperature range 500-700°C. The carrier trapping rate increases exponentially with increase of inverse annealing temperature indicating that in ion-implanted GaAs ultrafast carrier capture occurs to the same trapping centers as in low-temperature-grown GaAs. Relatively large resistivity and electron mobility in As-implanted GaAs have been observed after annealing, which shows that this material possesses properties required for a variety of ultrafast optoelectronic applications.

UR - http://www.scopus.com/inward/record.url?scp=0038900523&partnerID=8YFLogxK

U2 - 10.1063/1.126017

DO - 10.1063/1.126017

M3 - Article

SN - 0003-6951

VL - 76

SP - 1306

EP - 1308

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers

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