Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers

N. G. Rudawski; K. S. Jones; R. G. Elliman

doi:10.1116/1.2775459

Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers

N. G. Rudawski^*, K. S. Jones, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si+ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects ∼60 nm deep formed at 525 °C for As+ implant energies of 7.5-50 keV with peak As concentration of ∼5.0× 1020 cm-3. Defect formation was attributed to an As-enhanced [110] regrowth rate relative to the [001] regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation. The similarity of mask-edge defect depths with As+ implant energy was attributed to surface retardation of [110] regrowth in shallow implants and enhanced [001] regrowth in deeper implants. Results indicate stress effects on regrowth rates are small compared to dopant effects.

Original language	English
Pages (from-to)	435-438
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	26
Issue number	1
DOIs	https://doi.org/10.1116/1.2775459
Publication status	Published - 2008

Access to Document

10.1116/1.2775459

Cite this

@article{3895c5ae2fe14ed99de09ed5bd5a3a73,

title = "Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers",

abstract = "The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si+ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects ∼60 nm deep formed at 525 °C for As+ implant energies of 7.5-50 keV with peak As concentration of ∼5.0× 1020 cm-3. Defect formation was attributed to an As-enhanced [110] regrowth rate relative to the [001] regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation. The similarity of mask-edge defect depths with As+ implant energy was attributed to surface retardation of [110] regrowth in shallow implants and enhanced [001] regrowth in deeper implants. Results indicate stress effects on regrowth rates are small compared to dopant effects.",

author = "Rudawski, {N. G.} and Jones, {K. S.} and Elliman, {R. G.}",

year = "2008",

doi = "10.1116/1.2775459",

language = "English",

volume = "26",

pages = "435--438",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers

AU - Rudawski, N. G.

AU - Jones, K. S.

AU - Elliman, R. G.

PY - 2008

Y1 - 2008

N2 - The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si+ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects ∼60 nm deep formed at 525 °C for As+ implant energies of 7.5-50 keV with peak As concentration of ∼5.0× 1020 cm-3. Defect formation was attributed to an As-enhanced [110] regrowth rate relative to the [001] regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation. The similarity of mask-edge defect depths with As+ implant energy was attributed to surface retardation of [110] regrowth in shallow implants and enhanced [001] regrowth in deeper implants. Results indicate stress effects on regrowth rates are small compared to dopant effects.

AB - The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si+ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects ∼60 nm deep formed at 525 °C for As+ implant energies of 7.5-50 keV with peak As concentration of ∼5.0× 1020 cm-3. Defect formation was attributed to an As-enhanced [110] regrowth rate relative to the [001] regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation. The similarity of mask-edge defect depths with As+ implant energy was attributed to surface retardation of [110] regrowth in shallow implants and enhanced [001] regrowth in deeper implants. Results indicate stress effects on regrowth rates are small compared to dopant effects.

UR - http://www.scopus.com/inward/record.url?scp=38849094047&partnerID=8YFLogxK

U2 - 10.1116/1.2775459

DO - 10.1116/1.2775459

M3 - Article

SN - 1071-1023

VL - 26

SP - 435

EP - 438

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this