Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

C. Carmody; H. H. Tan; C. Jagadish

doi:10.1063/1.1555273

Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

C. Carmody^*, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The effect of implantation induced interdiffusion in InP and InGaAs quantum well structures was investigated. In InP capped sample, the implant temperature affected the dose dependent evolution of shifts in photoluminescence energy. The InP capped sample was seen as more sensitive to the implant temperature than the InGaAs sample.

Original language	English
Pages (from-to)	4468-4470
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.1555273
Publication status	Published - 15 Apr 2003

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title = "Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells",

abstract = "The effect of implantation induced interdiffusion in InP and InGaAs quantum well structures was investigated. In InP capped sample, the implant temperature affected the dose dependent evolution of shifts in photoluminescence energy. The InP capped sample was seen as more sensitive to the implant temperature than the InGaAs sample.",

author = "C. Carmody and Tan, {H. H.} and C. Jagadish",

year = "2003",

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AU - Carmody, C.

AU - Tan, H. H.

AU - Jagadish, C.

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Y1 - 2003/4/15

N2 - The effect of implantation induced interdiffusion in InP and InGaAs quantum well structures was investigated. In InP capped sample, the implant temperature affected the dose dependent evolution of shifts in photoluminescence energy. The InP capped sample was seen as more sensitive to the implant temperature than the InGaAs sample.

AB - The effect of implantation induced interdiffusion in InP and InGaAs quantum well structures was investigated. In InP capped sample, the implant temperature affected the dose dependent evolution of shifts in photoluminescence energy. The InP capped sample was seen as more sensitive to the implant temperature than the InGaAs sample.

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U2 - 10.1063/1.1555273

DO - 10.1063/1.1555273

M3 - Article

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SP - 4468

EP - 4470

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

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