Influence of growth temperature and V/III ratio on Au-assisted In xGa1-xAs nanowires

A. S. Ameruddin; H. H. Tan; H. A. Fonseka; Q. Gao; J. Wong-Leung; P. Parkinson; S. Breuer; C. Jagadish

doi:10.1109/COMMAD.2012.6472348

Influence of growth temperature and V/III ratio on Au-assisted In _xGa_1-xAs nanowires

A. S. Ameruddin^*, H. H. Tan, H. A. Fonseka, Q. Gao, J. Wong-Leung, P. Parkinson, S. Breuer, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In_xGa_1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along the nanowires is non-uniform with typically In-rich bases and Ga-rich tips.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	37-38
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472348
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

Access to Document

10.1109/COMMAD.2012.6472348

Cite this

Ameruddin, A. S., Tan, H. H., Fonseka, H. A., Gao, Q., Wong-Leung, J., Parkinson, P., Breuer, S., & Jagadish, C. (2012). Influence of growth temperature and V/III ratio on Au-assisted In _xGa_1-xAs nanowires. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 37-38). Article 6472348 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472348

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title = "Influence of growth temperature and V/III ratio on Au-assisted In xGa1-xAs nanowires",

abstract = "InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along the nanowires is non-uniform with typically In-rich bases and Ga-rich tips.",

author = "Ameruddin, {A. S.} and Tan, {H. H.} and Fonseka, {H. A.} and Q. Gao and J. Wong-Leung and P. Parkinson and S. Breuer and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472348",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "37--38",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Ameruddin, AS, Tan, HH, Fonseka, HA, Gao, Q, Wong-Leung, J, Parkinson, P, Breuer, S & Jagadish, C 2012, Influence of growth temperature and V/III ratio on Au-assisted In _xGa_1-xAs nanowires. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472348, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 37-38, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472348

Influence of growth temperature and V/III ratio on Au-assisted In _xGa_1-xAs nanowires. / Ameruddin, A. S.; Tan, H. H.; Fonseka, H. A. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 37-38 6472348 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along the nanowires is non-uniform with typically In-rich bases and Ga-rich tips.

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Ameruddin AS, Tan HH, Fonseka HA, Gao Q, Wong-Leung J, Parkinson P et al. Influence of growth temperature and V/III ratio on Au-assisted In _xGa_1-xAs nanowires. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 37-38. 6472348. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472348