Influence of implantation damage on emitter recombination

Thomas Ratcliff; Avi Shalav; Kean Chern Fong; Robert Elliman; Andrew Blakers

doi:10.1016/j.egypro.2014.08.080

Influence of implantation damage on emitter recombination

Thomas Ratcliff^*, Avi Shalav, Kean Chern Fong, Robert Elliman, Andrew Blakers

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

In this study the influence of implantation damage on emitter recombination is examined for both boron and phosphorus implanted emitters after thermal processing. Dominant defects are identified and used to describe observed changes in emitter saturation current, J0, as a function of implant fluence. Recombination through defects is identified as the cause of increased J0 compared with simulated values. For P-implanted samples J_0n+is shown to depend on annealing temperature for samples partially amorphised by a 1×1015 cm-2 P implantation at 40 keV. J0n₊ of samples completely amorphised by a 3×1015 cm-2 phosphorus implant show much reduced dependence on annealing temperature. For boron implanted samples annealed at 1000°C, J0p₊ was found to be below 25 fA.cm-2 for implant fluence less than 5×1014 cm-2 but to increase significantly for high fluence, where defects such as boron-interstitial clusters and dislocation loops are likely to dominate the observed recombination.

Original language	English
Pages (from-to)	272-279
Number of pages	8
Journal	Energy Procedia
Volume	55
DOIs	https://doi.org/10.1016/j.egypro.2014.08.080
Publication status	Published - 2014
Event	4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014 - Hertogenbosch, Netherlands Duration: 25 Mar 2014 → 27 Mar 2014

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10.1016/j.egypro.2014.08.080

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@article{cb7c4c2034c743d8a848c72721dd0040,

title = "Influence of implantation damage on emitter recombination",

abstract = "In this study the influence of implantation damage on emitter recombination is examined for both boron and phosphorus implanted emitters after thermal processing. Dominant defects are identified and used to describe observed changes in emitter saturation current, J0, as a function of implant fluence. Recombination through defects is identified as the cause of increased J0 compared with simulated values. For P-implanted samples J0n+is shown to depend on annealing temperature for samples partially amorphised by a 1×1015 cm-2 P implantation at 40 keV. J0n+ of samples completely amorphised by a 3×1015 cm-2 phosphorus implant show much reduced dependence on annealing temperature. For boron implanted samples annealed at 1000°C, J0p+ was found to be below 25 fA.cm-2 for implant fluence less than 5×1014 cm-2 but to increase significantly for high fluence, where defects such as boron-interstitial clusters and dislocation loops are likely to dominate the observed recombination.",

keywords = "Defects, Ion implantation, Recombination",

author = "Thomas Ratcliff and Avi Shalav and Fong, {Kean Chern} and Robert Elliman and Andrew Blakers",

note = "Publisher Copyright: {\textcopyright} 2014 The Authors. Published by Elsevier Ltd.; 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014 ; Conference date: 25-03-2014 Through 27-03-2014",

year = "2014",

doi = "10.1016/j.egypro.2014.08.080",

language = "English",

volume = "55",

pages = "272--279",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Influence of implantation damage on emitter recombination

AU - Ratcliff, Thomas

AU - Shalav, Avi

AU - Fong, Kean Chern

AU - Elliman, Robert

AU - Blakers, Andrew

PY - 2014

Y1 - 2014

N2 - In this study the influence of implantation damage on emitter recombination is examined for both boron and phosphorus implanted emitters after thermal processing. Dominant defects are identified and used to describe observed changes in emitter saturation current, J0, as a function of implant fluence. Recombination through defects is identified as the cause of increased J0 compared with simulated values. For P-implanted samples J0n+is shown to depend on annealing temperature for samples partially amorphised by a 1×1015 cm-2 P implantation at 40 keV. J0n+ of samples completely amorphised by a 3×1015 cm-2 phosphorus implant show much reduced dependence on annealing temperature. For boron implanted samples annealed at 1000°C, J0p+ was found to be below 25 fA.cm-2 for implant fluence less than 5×1014 cm-2 but to increase significantly for high fluence, where defects such as boron-interstitial clusters and dislocation loops are likely to dominate the observed recombination.

AB - In this study the influence of implantation damage on emitter recombination is examined for both boron and phosphorus implanted emitters after thermal processing. Dominant defects are identified and used to describe observed changes in emitter saturation current, J0, as a function of implant fluence. Recombination through defects is identified as the cause of increased J0 compared with simulated values. For P-implanted samples J0n+is shown to depend on annealing temperature for samples partially amorphised by a 1×1015 cm-2 P implantation at 40 keV. J0n+ of samples completely amorphised by a 3×1015 cm-2 phosphorus implant show much reduced dependence on annealing temperature. For boron implanted samples annealed at 1000°C, J0p+ was found to be below 25 fA.cm-2 for implant fluence less than 5×1014 cm-2 but to increase significantly for high fluence, where defects such as boron-interstitial clusters and dislocation loops are likely to dominate the observed recombination.

KW - Defects

KW - Ion implantation

KW - Recombination

UR - http://www.scopus.com/inward/record.url?scp=84919881446&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2014.08.080

DO - 10.1016/j.egypro.2014.08.080

M3 - Conference article

SN - 1876-6102

VL - 55

SP - 272

EP - 279

JO - Energy Procedia

JF - Energy Procedia

T2 - 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014

Y2 - 25 March 2014 through 27 March 2014

ER -

Influence of implantation damage on emitter recombination

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