Influence of low-temperature chemical vapor deposited SiO2 capping layer porosity on GaAs/AlGaAs quantum well intermixing

P. N.K. Deenapanray; H. H. Tan; L. Fu; C. Jagadish

doi:10.1149/1.1391000

Influence of low-temperature chemical vapor deposited SiO₂ capping layer porosity on GaAs/AlGaAs quantum well intermixing

P. N.K. Deenapanray^*, H. H. Tan, L. Fu, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Plasma-enhanced chemical vapor deposition of SiO₂ at temperatures below 300 °C was used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue shifts of up to approximately 200 meV were observed while still maintaining clearly resolved excitonic behavior. The energy shifts were similar for capping layers deposited below 200 °C, which were significantly higher than those obtained for SiO₂, layers deposited at 300 °C. We demonstrate that the increased porosity of SiO₂ capping layers deposited below 200 °C is responsible for the enhanced intermixing. The evidence for porosity-enhanced intermixing was obtained from spectroscopic ellipsometry, Fourier transform infrared spectroscopy, and P-etch rate measurements.

Original language	English
Pages (from-to)	196-199
Number of pages	4
Journal	Electrochemical and Solid-State Letters
Volume	3
Issue number	4
DOIs	https://doi.org/10.1149/1.1391000
Publication status	Published - Apr 2000

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title = "Influence of low-temperature chemical vapor deposited SiO2 capping layer porosity on GaAs/AlGaAs quantum well intermixing",

abstract = "Plasma-enhanced chemical vapor deposition of SiO2 at temperatures below 300 °C was used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue shifts of up to approximately 200 meV were observed while still maintaining clearly resolved excitonic behavior. The energy shifts were similar for capping layers deposited below 200 °C, which were significantly higher than those obtained for SiO2, layers deposited at 300 °C. We demonstrate that the increased porosity of SiO2 capping layers deposited below 200 °C is responsible for the enhanced intermixing. The evidence for porosity-enhanced intermixing was obtained from spectroscopic ellipsometry, Fourier transform infrared spectroscopy, and P-etch rate measurements.",

author = "Deenapanray, \{P. N.K.\} and Tan, \{H. H.\} and L. Fu and C. Jagadish",

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T1 - Influence of low-temperature chemical vapor deposited SiO2 capping layer porosity on GaAs/AlGaAs quantum well intermixing

AU - Deenapanray, P. N.K.

AU - Tan, H. H.

AU - Fu, L.

AU - Jagadish, C.

PY - 2000/4

Y1 - 2000/4

N2 - Plasma-enhanced chemical vapor deposition of SiO2 at temperatures below 300 °C was used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue shifts of up to approximately 200 meV were observed while still maintaining clearly resolved excitonic behavior. The energy shifts were similar for capping layers deposited below 200 °C, which were significantly higher than those obtained for SiO2, layers deposited at 300 °C. We demonstrate that the increased porosity of SiO2 capping layers deposited below 200 °C is responsible for the enhanced intermixing. The evidence for porosity-enhanced intermixing was obtained from spectroscopic ellipsometry, Fourier transform infrared spectroscopy, and P-etch rate measurements.

AB - Plasma-enhanced chemical vapor deposition of SiO2 at temperatures below 300 °C was used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue shifts of up to approximately 200 meV were observed while still maintaining clearly resolved excitonic behavior. The energy shifts were similar for capping layers deposited below 200 °C, which were significantly higher than those obtained for SiO2, layers deposited at 300 °C. We demonstrate that the increased porosity of SiO2 capping layers deposited below 200 °C is responsible for the enhanced intermixing. The evidence for porosity-enhanced intermixing was obtained from spectroscopic ellipsometry, Fourier transform infrared spectroscopy, and P-etch rate measurements.

UR - https://www.scopus.com/pages/publications/0033892688

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DO - 10.1149/1.1391000

M3 - Article

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VL - 3

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EP - 199

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

Influence of low-temperature chemical vapor deposited SiO₂ capping layer porosity on GaAs/AlGaAs quantum well intermixing

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