Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires

Yong Kim; Hannah J. Joyce; Qiang Gao; H. Hoe Tan; Chennupati Jagadish; Mohanchand Paladugu; Jin Zou; Alexandra A. Suvorova

doi:10.1021/nl052189o

Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires

Yong Kim, Hannah J. Joyce, Qiang Gao, H. Hoe Tan, Chennupati Jagadish^*, Mohanchand Paladugu, Jin Zou, Alexandra A. Suvorova

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

219 Citations (Scopus)

Abstract

We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.

Original language	English
Pages (from-to)	599-604
Number of pages	6
Journal	Nano Letters
Volume	6
Issue number	4
DOIs	https://doi.org/10.1021/nl052189o
Publication status	Published - Apr 2006

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@article{ca09e62da7a845e58d668349ff72b0c3,

title = "Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires",

abstract = "We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.",

author = "Yong Kim and Joyce, {Hannah J.} and Qiang Gao and Tan, {H. Hoe} and Chennupati Jagadish and Mohanchand Paladugu and Jin Zou and Suvorova, {Alexandra A.}",

year = "2006",

month = apr,

doi = "10.1021/nl052189o",

language = "English",

volume = "6",

pages = "599--604",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires

AU - Kim, Yong

AU - Joyce, Hannah J.

AU - Gao, Qiang

AU - Tan, H. Hoe

AU - Jagadish, Chennupati

AU - Paladugu, Mohanchand

AU - Zou, Jin

AU - Suvorova, Alexandra A.

PY - 2006/4

Y1 - 2006/4

N2 - We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.

AB - We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.

UR - http://www.scopus.com/inward/record.url?scp=33646401123&partnerID=8YFLogxK

U2 - 10.1021/nl052189o

DO - 10.1021/nl052189o

M3 - Article

SN - 1530-6984

VL - 6

SP - 599

EP - 604

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -

Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires

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