Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

F. E. Rougieux; B. Lim; J. Schmidt; M. Forster; D. MacDonald; A. Cuevas

doi:10.1063/1.3633492

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

F. E. Rougieux^*, B. Lim, J. Schmidt, M. Forster, D. MacDonald, A. Cuevas

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 C to 700 C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration.

Original language	English
Article number	063708
Journal	Journal of Applied Physics
Volume	110
Issue number	6
DOIs	https://doi.org/10.1063/1.3633492
Publication status	Published - 15 Sept 2011

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abstract = "In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 C to 700 C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration.",

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AU - Rougieux, F. E.

AU - Lim, B.

AU - Schmidt, J.

AU - Forster, M.

AU - MacDonald, D.

AU - Cuevas, A.

PY - 2011/9/15

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N2 - In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 C to 700 C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration.

AB - In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 C to 700 C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration.

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Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

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