Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon

Tsu Tsung Andrew Li; Simon Ruffell; Mario Tucci; Yves Mansouli; Christian Samundsett; Simona De Iullis; Luca Serenelli; Andres Cuevas

doi:10.1016/j.solmat.2010.03.034

Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon

Tsu Tsung Andrew Li^*, Simon Ruffell, Mario Tucci, Yves Mansouli, Christian Samundsett, Simona De Iullis, Luca Serenelli, Andres Cuevas

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

While sputtering has been shown to be capable of depositing aluminum oxide suitable for surface passivation, the mechanisms for this are yet to be firmly established and its potential realized. In this paper, we investigate the relationships between the oxygen in the sputtering process to the resulting composition of the deposited film and the surface passivation obtained. We find that surface passivation is not strongly dependent on the bulk composition of the film. Instead the results indicate that the interfacial silicon oxide layer that forms after annealing between the aluminum oxide film and the silicon is a much more important factor; it is this combined structure of aluminum oxide, silicon oxide and silicon that is crucial for obtaining negative charges and excellent surface passivation.

Original language	English
Pages (from-to)	69-72
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	95
Issue number	1
DOIs	https://doi.org/10.1016/j.solmat.2010.03.034
Publication status	Published - 1 Jan 2011

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@article{79ceb817444e4ba6ad5a0309c1bf239f,

title = "Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon",

abstract = "While sputtering has been shown to be capable of depositing aluminum oxide suitable for surface passivation, the mechanisms for this are yet to be firmly established and its potential realized. In this paper, we investigate the relationships between the oxygen in the sputtering process to the resulting composition of the deposited film and the surface passivation obtained. We find that surface passivation is not strongly dependent on the bulk composition of the film. Instead the results indicate that the interfacial silicon oxide layer that forms after annealing between the aluminum oxide film and the silicon is a much more important factor; it is this combined structure of aluminum oxide, silicon oxide and silicon that is crucial for obtaining negative charges and excellent surface passivation.",

keywords = "Aluminum oxide, Sputtering, Surface passivation",

author = "Li, {Tsu Tsung Andrew} and Simon Ruffell and Mario Tucci and Yves Mansouli and Christian Samundsett and {De Iullis}, Simona and Luca Serenelli and Andres Cuevas",

year = "2011",

month = jan,

day = "1",

doi = "10.1016/j.solmat.2010.03.034",

language = "English",

volume = "95",

pages = "69--72",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon

AU - Li, Tsu Tsung Andrew

AU - Ruffell, Simon

AU - Tucci, Mario

AU - Mansouli, Yves

AU - Samundsett, Christian

AU - De Iullis, Simona

AU - Serenelli, Luca

AU - Cuevas, Andres

PY - 2011/1/1

Y1 - 2011/1/1

N2 - While sputtering has been shown to be capable of depositing aluminum oxide suitable for surface passivation, the mechanisms for this are yet to be firmly established and its potential realized. In this paper, we investigate the relationships between the oxygen in the sputtering process to the resulting composition of the deposited film and the surface passivation obtained. We find that surface passivation is not strongly dependent on the bulk composition of the film. Instead the results indicate that the interfacial silicon oxide layer that forms after annealing between the aluminum oxide film and the silicon is a much more important factor; it is this combined structure of aluminum oxide, silicon oxide and silicon that is crucial for obtaining negative charges and excellent surface passivation.

AB - While sputtering has been shown to be capable of depositing aluminum oxide suitable for surface passivation, the mechanisms for this are yet to be firmly established and its potential realized. In this paper, we investigate the relationships between the oxygen in the sputtering process to the resulting composition of the deposited film and the surface passivation obtained. We find that surface passivation is not strongly dependent on the bulk composition of the film. Instead the results indicate that the interfacial silicon oxide layer that forms after annealing between the aluminum oxide film and the silicon is a much more important factor; it is this combined structure of aluminum oxide, silicon oxide and silicon that is crucial for obtaining negative charges and excellent surface passivation.

KW - Aluminum oxide

KW - Sputtering

KW - Surface passivation

UR - http://www.scopus.com/inward/record.url?scp=78149362339&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2010.03.034

DO - 10.1016/j.solmat.2010.03.034

M3 - Article

SN - 0927-0248

VL - 95

SP - 69

EP - 72

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 1

ER -

Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon

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