Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector

Li Na; Wei Lu; Ning Li; Xingquan Liu; Xianzhang Yuan; Hongfei Dou; Xuechu Shen; Lan Fu; H. H. Tan; C. Jagadish; M. B. Johnston; M. Gal

Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector

Li Na^*, Wei Lu, Ning Li, Xingquan Liu, Xianzhang Yuan, Hongfei Dou, Xuechu Shen, Lan Fu, H. H. Tan, C. Jagadish, M. B. Johnston, M. Gal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The intermixing technique was used to modify the energy level distribution of GaAs/AlGaAs quantum-wells so as to change the photoelectric characteristics of the photodetector. A large response wavelength shift was achieved by the proton implantation followed by standard annealing procedures (950°C for 30s). The measurement results show that (1) PL and photoresponse spectra are the function of ion dose in the range from 5×10¹⁴/cm² to 2.5×10¹⁵/cm²; (2) the peak photoresponse wavelength is tunable between 8.4 μm and 10.2 μm for the infrared; (3) the PL peak for the related material changes from 1.62 eV to 1.645 eV. The influence on responsivity and dark current was analyzed.

Original language	English
Pages (from-to)	25-28
Number of pages	4
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	19
Issue number	1
Publication status	Published - Feb 2000

Cite this

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title = "Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector",

abstract = "The intermixing technique was used to modify the energy level distribution of GaAs/AlGaAs quantum-wells so as to change the photoelectric characteristics of the photodetector. A large response wavelength shift was achieved by the proton implantation followed by standard annealing procedures (950°C for 30s). The measurement results show that (1) PL and photoresponse spectra are the function of ion dose in the range from 5×1014/cm2 to 2.5×1015/cm2; (2) the peak photoresponse wavelength is tunable between 8.4 μm and 10.2 μm for the infrared; (3) the PL peak for the related material changes from 1.62 eV to 1.645 eV. The influence on responsivity and dark current was analyzed.",

author = "Li Na and Wei Lu and Ning Li and Xingquan Liu and Xianzhang Yuan and Hongfei Dou and Xuechu Shen and Lan Fu and Tan, {H. H.} and C. Jagadish and Johnston, {M. B.} and M. Gal",

year = "2000",

month = feb,

language = "English",

volume = "19",

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journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

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TY - JOUR

T1 - Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector

AU - Na, Li

AU - Lu, Wei

AU - Li, Ning

AU - Liu, Xingquan

AU - Yuan, Xianzhang

AU - Dou, Hongfei

AU - Shen, Xuechu

AU - Fu, Lan

AU - Tan, H. H.

AU - Jagadish, C.

AU - Johnston, M. B.

AU - Gal, M.

PY - 2000/2

Y1 - 2000/2

N2 - The intermixing technique was used to modify the energy level distribution of GaAs/AlGaAs quantum-wells so as to change the photoelectric characteristics of the photodetector. A large response wavelength shift was achieved by the proton implantation followed by standard annealing procedures (950°C for 30s). The measurement results show that (1) PL and photoresponse spectra are the function of ion dose in the range from 5×1014/cm2 to 2.5×1015/cm2; (2) the peak photoresponse wavelength is tunable between 8.4 μm and 10.2 μm for the infrared; (3) the PL peak for the related material changes from 1.62 eV to 1.645 eV. The influence on responsivity and dark current was analyzed.

AB - The intermixing technique was used to modify the energy level distribution of GaAs/AlGaAs quantum-wells so as to change the photoelectric characteristics of the photodetector. A large response wavelength shift was achieved by the proton implantation followed by standard annealing procedures (950°C for 30s). The measurement results show that (1) PL and photoresponse spectra are the function of ion dose in the range from 5×1014/cm2 to 2.5×1015/cm2; (2) the peak photoresponse wavelength is tunable between 8.4 μm and 10.2 μm for the infrared; (3) the PL peak for the related material changes from 1.62 eV to 1.645 eV. The influence on responsivity and dark current was analyzed.

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M3 - Article

SN - 1001-9014

VL - 19

SP - 25

EP - 28

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 1

ER -

Influence of proton implantation and rapid thermal annealing on GaAs/AlGaAs quantum well infrared photodetector

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