Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

G. Jolley; L. Fu; H. H. Tan; C. Jagadish

doi:10.1063/1.2802559

Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

G. Jolley^*, L. Fu, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. In0.5 Ga0.5 As quantum dots embedded in an In0.15 Ga0.85 AsGaAs quantum well (QW) or a GaAs Al0.2 Ga0.8 As QW have been incorporated into photodetectors and were characterized. A spectral response in the 3-5 μm atmospheric window has been achieved by adopting the GaAs Al0.2 Ga0.8 As QW.

Original language	English
Article number	173508
Journal	Applied Physics Letters
Volume	91
Issue number	17
DOIs	https://doi.org/10.1063/1.2802559
Publication status	Published - 2007

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abstract = "We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. In0.5 Ga0.5 As quantum dots embedded in an In0.15 Ga0.85 AsGaAs quantum well (QW) or a GaAs Al0.2 Ga0.8 As QW have been incorporated into photodetectors and were characterized. A spectral response in the 3-5 μm atmospheric window has been achieved by adopting the GaAs Al0.2 Ga0.8 As QW.",

author = "G. Jolley and L. Fu and Tan, {H. H.} and C. Jagadish",

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T1 - Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

AU - Jolley, G.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2007

Y1 - 2007

N2 - We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. In0.5 Ga0.5 As quantum dots embedded in an In0.15 Ga0.85 AsGaAs quantum well (QW) or a GaAs Al0.2 Ga0.8 As QW have been incorporated into photodetectors and were characterized. A spectral response in the 3-5 μm atmospheric window has been achieved by adopting the GaAs Al0.2 Ga0.8 As QW.

AB - We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. In0.5 Ga0.5 As quantum dots embedded in an In0.15 Ga0.85 AsGaAs quantum well (QW) or a GaAs Al0.2 Ga0.8 As QW have been incorporated into photodetectors and were characterized. A spectral response in the 3-5 μm atmospheric window has been achieved by adopting the GaAs Al0.2 Ga0.8 As QW.

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U2 - 10.1063/1.2802559

DO - 10.1063/1.2802559

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 173508

ER -

Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

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