Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

K. Stewart; M. Buda; J. Wong-Leung; L. Fu; C. Jagadish; A. Stiff-Roberts; P. Bhattacharya

doi:10.1063/1.1609634

Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

K. Stewart^*, M. Buda, J. Wong-Leung, L. Fu, C. Jagadish, A. Stiff-Roberts, P. Bhattacharya

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector (QDIP) was studied. Temperatures in the range of 600-800°C for 60 s, typical of atomic interdiffusion were used. The devices exhibited large dark currents after rapid thermal annealing.

Original language	English
Pages (from-to)	5283-5289
Number of pages	7
Journal	Journal of Applied Physics
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.1609634
Publication status	Published - 15 Oct 2003

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@article{e0f45288a98e436c8dd0e301e479aecd,

title = "Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector",

abstract = "Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector (QDIP) was studied. Temperatures in the range of 600-800°C for 60 s, typical of atomic interdiffusion were used. The devices exhibited large dark currents after rapid thermal annealing.",

author = "K. Stewart and M. Buda and J. Wong-Leung and L. Fu and C. Jagadish and A. Stiff-Roberts and P. Bhattacharya",

year = "2003",

month = oct,

day = "15",

doi = "10.1063/1.1609634",

language = "English",

volume = "94",

pages = "5283--5289",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

AU - Stewart, K.

AU - Buda, M.

AU - Wong-Leung, J.

AU - Fu, L.

AU - Jagadish, C.

AU - Stiff-Roberts, A.

AU - Bhattacharya, P.

PY - 2003/10/15

Y1 - 2003/10/15

N2 - Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector (QDIP) was studied. Temperatures in the range of 600-800°C for 60 s, typical of atomic interdiffusion were used. The devices exhibited large dark currents after rapid thermal annealing.

AB - Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector (QDIP) was studied. Temperatures in the range of 600-800°C for 60 s, typical of atomic interdiffusion were used. The devices exhibited large dark currents after rapid thermal annealing.

UR - http://www.scopus.com/inward/record.url?scp=0242272329&partnerID=8YFLogxK

U2 - 10.1063/1.1609634

DO - 10.1063/1.1609634

M3 - Article

SN - 0021-8979

VL - 94

SP - 5283

EP - 5289

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

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