Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures

P. L. Gareso; M. Buda; L. Fu; H. H. Tan; C. Jagadish

doi:10.1088/0268-1242/22/9/002

Influence of SiO₂ and TiO₂ dielectric layers on the atomic intermixing of In_xGa_1-xAs/InP quantum well structures

P. L. Gareso, M. Buda, L. Fu, H. H. Tan, C. Jagadish

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Abstract

We have studied the influence of SiO₂ and TiO₂ dielectric layers on the atomic intermixing of InxGa_1-xAs/InP quantum well structures using the impurity-free vacancy disordering technique. Photoluminescence results revealed that an enhancement of interdiffusion was obtained when the samples were capped with SiO₂. Although TiO₂ layers were able to suppress the interdiffusion in the InGaAs/InP system, the suppression was not significant compared to the AlGaAs/GaAs system. Based on a fitting procedure that was deconvoluted from the photoluminescence spectra as well as a theoretical modeling, the electron-heavy hole and electron-light hole transitions were identified, and a ratio of the group V to the group III diffusion coefficients (k) was obtained. The k ratio of the InGaAs/InP samples capped with SiO₂ is relatively larger than that of samples capped with TiO₂ layers.

Original language	English
Pages (from-to)	988-992
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	22
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/22/9/002
Publication status	Published - 20 Jul 2007

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title = "Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures",

abstract = "We have studied the influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures using the impurity-free vacancy disordering technique. Photoluminescence results revealed that an enhancement of interdiffusion was obtained when the samples were capped with SiO2. Although TiO2 layers were able to suppress the interdiffusion in the InGaAs/InP system, the suppression was not significant compared to the AlGaAs/GaAs system. Based on a fitting procedure that was deconvoluted from the photoluminescence spectra as well as a theoretical modeling, the electron-heavy hole and electron-light hole transitions were identified, and a ratio of the group V to the group III diffusion coefficients (k) was obtained. The k ratio of the InGaAs/InP samples capped with SiO2 is relatively larger than that of samples capped with TiO2 layers.",

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AU - Gareso, P. L.

AU - Buda, M.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2007/7/20

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N2 - We have studied the influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures using the impurity-free vacancy disordering technique. Photoluminescence results revealed that an enhancement of interdiffusion was obtained when the samples were capped with SiO2. Although TiO2 layers were able to suppress the interdiffusion in the InGaAs/InP system, the suppression was not significant compared to the AlGaAs/GaAs system. Based on a fitting procedure that was deconvoluted from the photoluminescence spectra as well as a theoretical modeling, the electron-heavy hole and electron-light hole transitions were identified, and a ratio of the group V to the group III diffusion coefficients (k) was obtained. The k ratio of the InGaAs/InP samples capped with SiO2 is relatively larger than that of samples capped with TiO2 layers.

AB - We have studied the influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures using the impurity-free vacancy disordering technique. Photoluminescence results revealed that an enhancement of interdiffusion was obtained when the samples were capped with SiO2. Although TiO2 layers were able to suppress the interdiffusion in the InGaAs/InP system, the suppression was not significant compared to the AlGaAs/GaAs system. Based on a fitting procedure that was deconvoluted from the photoluminescence spectra as well as a theoretical modeling, the electron-heavy hole and electron-light hole transitions were identified, and a ratio of the group V to the group III diffusion coefficients (k) was obtained. The k ratio of the InGaAs/InP samples capped with SiO2 is relatively larger than that of samples capped with TiO2 layers.

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Influence of SiO₂ and TiO₂ dielectric layers on the atomic intermixing of In_xGa_1-xAs/InP quantum well structures

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