Influence of SiOx capping layer quality on impurity-free interdiffusion in GaAs/AlGaAs quantum wells

P. N.K. Deenapanray; H. H. Tan; C. Jagadish

Influence of SiO_x capping layer quality on impurity-free interdiffusion in GaAs/AlGaAs quantum wells

P. N.K. Deenapanray^*, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We have investigated the influence of SiO_x capping layer quality on impurity-free vacancy interdiffusion in GaAs/Al_0.54Ga_0.46As quantum wells. Dielectric layers were deposited by plasma-enhanced chemical vapor deposition, and properties of layers were changed by varying either the flow rate of silane or deposition temperature. The extent of intermixing in our samples is discussed in terms of the O content and incorporation of N in capping layers, and also on their porosity. We also report on the electrically active defects which are introduced in SiO₂ capped and annealed n-GaAs, and relate them to the intermixing process.

Original language	English
Pages (from-to)	491-502
Number of pages	12
Journal	Materials Research Society Symposium - Proceedings
Volume	607
Publication status	Published - 2000
Event	The 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III' - Boston, MA, USA Duration: 29 Nov 1999 → 2 Dec 1999

Cite this

@article{20c3040f0db544bfbf4f253dbda53843,

title = "Influence of SiOx capping layer quality on impurity-free interdiffusion in GaAs/AlGaAs quantum wells",

abstract = "We have investigated the influence of SiOx capping layer quality on impurity-free vacancy interdiffusion in GaAs/Al0.54Ga0.46As quantum wells. Dielectric layers were deposited by plasma-enhanced chemical vapor deposition, and properties of layers were changed by varying either the flow rate of silane or deposition temperature. The extent of intermixing in our samples is discussed in terms of the O content and incorporation of N in capping layers, and also on their porosity. We also report on the electrically active defects which are introduced in SiO2 capped and annealed n-GaAs, and relate them to the intermixing process.",

author = "Deenapanray, {P. N.K.} and Tan, {H. H.} and C. Jagadish",

year = "2000",

language = "English",

volume = "607",

pages = "491--502",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "The 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III' ; Conference date: 29-11-1999 Through 02-12-1999",

}

TY - JOUR

T1 - Influence of SiOx capping layer quality on impurity-free interdiffusion in GaAs/AlGaAs quantum wells

AU - Deenapanray, P. N.K.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2000

Y1 - 2000

N2 - We have investigated the influence of SiOx capping layer quality on impurity-free vacancy interdiffusion in GaAs/Al0.54Ga0.46As quantum wells. Dielectric layers were deposited by plasma-enhanced chemical vapor deposition, and properties of layers were changed by varying either the flow rate of silane or deposition temperature. The extent of intermixing in our samples is discussed in terms of the O content and incorporation of N in capping layers, and also on their porosity. We also report on the electrically active defects which are introduced in SiO2 capped and annealed n-GaAs, and relate them to the intermixing process.

AB - We have investigated the influence of SiOx capping layer quality on impurity-free vacancy interdiffusion in GaAs/Al0.54Ga0.46As quantum wells. Dielectric layers were deposited by plasma-enhanced chemical vapor deposition, and properties of layers were changed by varying either the flow rate of silane or deposition temperature. The extent of intermixing in our samples is discussed in terms of the O content and incorporation of N in capping layers, and also on their porosity. We also report on the electrically active defects which are introduced in SiO2 capped and annealed n-GaAs, and relate them to the intermixing process.

UR - http://www.scopus.com/inward/record.url?scp=0033700103&partnerID=8YFLogxK

M3 - Conference article

SN - 0272-9172

VL - 607

SP - 491

EP - 502

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - The 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III'

Y2 - 29 November 1999 through 2 December 1999

ER -

Influence of SiO_x capping layer quality on impurity-free interdiffusion in GaAs/AlGaAs quantum wells

Abstract

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