Influence of the NH₃:SiH₄ ratio and surface morphology on the surface passivation of phosphorus-diffused C-Si by PECVD SiN_x

Engineering

• Passivation 100%
• Textured Surface 100%
• Surface Morphology 100%
• Sheet Resistance 100%
• Crystalline Silicon 50%
• Nitride 50%
• Optical Transmission 50%
• Refractive Index 50%
• Saturation Current Density 50%
• Planar Surface 50%
• Optical Surface 50%

Material Science

• Surface Passivation 100%
• Surface Morphology 100%
• Silicon 50%
• Crystalline Material 50%
• Density 50%
• Silicon Nitride 50%
• Amorphous Silicon 50%
• Refractive Index 50%

Immunology and Microbiology

• Current Density 11%