TY - JOUR
T1 - Influences of the type of dopant and substrate on ferromagnetism in ZnO:Mn
AU - Wu, Kongping
AU - Jiang, Jianhui
AU - Tang, Kun
AU - Gu, Shulin
AU - Ye, Jiandong
AU - Zhu, Shunming
AU - Lu, Kailin
AU - Zhou, Mengran
AU - Xu, Mingxiang
AU - Zhang, Rong
AU - Zheng, Youdou
PY - 2014/4/1
Y1 - 2014/4/1
N2 - ZnO:Mn films doped with indium (In) and nitrogen (N) have been grown on sapphire and ZnO template substrates, respectively by the metal-organic chemical vapor deposition method. All these samples show clear hysteresis loops and saturation magnetizations (MS) at room temperature characterized by a vibrating sample magnetometer in a Quantum Design Physical Property Measurement System. For the n-type ZnO:(Mn, In) and ZnO:Mn samples, the mechanism of the room-temperature ferromagnetism (RTFM) has been ascribed to the interactions between BMPs, which are formed by the magnetic coupling between Mn ions and the oxygen vacancies (VO) defects. However, for the p-type ZnO:(Mn, N) samples, a single mechanism is not fully responsible for the measured RTFM. In contrast with the role of VO in ZnO:(Mn, In) and ZnO:Mn system, the incorporation of VO in ZnO:(Mn, N) would weaken the FM. For the ZnO:(Mn,N), the observed highest MS is mainly ascribed to the RKKY interactions from the N 2p and Mn 3d ferromagnetic exchange coupling. Besides, a density functional theory simulation also indicates that ferromagnetic coupling may be enhanced by VO in n-type ZnO:(Mn, In) and ZnO:Mn films, while the VO defects in p-type ZnO:(Mn:N) films act oppositely, that may weaken the ferromagnetic coupling.
AB - ZnO:Mn films doped with indium (In) and nitrogen (N) have been grown on sapphire and ZnO template substrates, respectively by the metal-organic chemical vapor deposition method. All these samples show clear hysteresis loops and saturation magnetizations (MS) at room temperature characterized by a vibrating sample magnetometer in a Quantum Design Physical Property Measurement System. For the n-type ZnO:(Mn, In) and ZnO:Mn samples, the mechanism of the room-temperature ferromagnetism (RTFM) has been ascribed to the interactions between BMPs, which are formed by the magnetic coupling between Mn ions and the oxygen vacancies (VO) defects. However, for the p-type ZnO:(Mn, N) samples, a single mechanism is not fully responsible for the measured RTFM. In contrast with the role of VO in ZnO:(Mn, In) and ZnO:Mn system, the incorporation of VO in ZnO:(Mn, N) would weaken the FM. For the ZnO:(Mn,N), the observed highest MS is mainly ascribed to the RKKY interactions from the N 2p and Mn 3d ferromagnetic exchange coupling. Besides, a density functional theory simulation also indicates that ferromagnetic coupling may be enhanced by VO in n-type ZnO:(Mn, In) and ZnO:Mn films, while the VO defects in p-type ZnO:(Mn:N) films act oppositely, that may weaken the ferromagnetic coupling.
KW - Dilute magnetic semiconductor
KW - Ferromagnetism
KW - First principle
KW - Magnetization
KW - ZnO template
KW - ZnO:Mn
UR - http://www.scopus.com/inward/record.url?scp=84890482721&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2013.11.048
DO - 10.1016/j.jmmm.2013.11.048
M3 - Article
SN - 0304-8853
VL - 355
SP - 51
EP - 57
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
ER -