InGaAs quantum dots grown with GaP strain compensation layers

P. Lever; H. H. Tan; C. Jagadish

doi:10.1063/1.1707230

InGaAs quantum dots grown with GaP strain compensation layers

P. Lever^*
, H. H. Tan
, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

The use of GaP as a strain compensation layer was studied. The GaP layers were in tensile strain with respect to GaAs, with a lattice mismatch of 4%, whereas the In_0.5Ga_0.5As dots were in compressive strain. The samples were grown using a low-pressure horizontal flow metalorganic chemical vapor deposition (MOCVD) reactor. It was found that the density of dots in the top layer of the stack is increased as the GaP layer is deposited closer to the dot layer.

Original language	English
Pages (from-to)	5710-5714
Number of pages	5
Journal	Journal of Applied Physics
Volume	95
Issue number	10
DOIs	https://doi.org/10.1063/1.1707230
Publication status	Published - 15 May 2004

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title = "InGaAs quantum dots grown with GaP strain compensation layers",

abstract = "The use of GaP as a strain compensation layer was studied. The GaP layers were in tensile strain with respect to GaAs, with a lattice mismatch of 4\%, whereas the In0.5Ga0.5As dots were in compressive strain. The samples were grown using a low-pressure horizontal flow metalorganic chemical vapor deposition (MOCVD) reactor. It was found that the density of dots in the top layer of the stack is increased as the GaP layer is deposited closer to the dot layer.",

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AU - Tan, H. H.

AU - Jagadish, C.

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N2 - The use of GaP as a strain compensation layer was studied. The GaP layers were in tensile strain with respect to GaAs, with a lattice mismatch of 4%, whereas the In0.5Ga0.5As dots were in compressive strain. The samples were grown using a low-pressure horizontal flow metalorganic chemical vapor deposition (MOCVD) reactor. It was found that the density of dots in the top layer of the stack is increased as the GaP layer is deposited closer to the dot layer.

AB - The use of GaP as a strain compensation layer was studied. The GaP layers were in tensile strain with respect to GaAs, with a lattice mismatch of 4%, whereas the In0.5Ga0.5As dots were in compressive strain. The samples were grown using a low-pressure horizontal flow metalorganic chemical vapor deposition (MOCVD) reactor. It was found that the density of dots in the top layer of the stack is increased as the GaP layer is deposited closer to the dot layer.

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U2 - 10.1063/1.1707230

DO - 10.1063/1.1707230

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VL - 95

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

InGaAs quantum dots grown with GaP strain compensation layers

Abstract

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