InGaAsN quantum dots for long wavelength lasers

Qiang Gao; Manuela Buda; Hoe Tan Hark; Chennupati Jagadish

doi:10.1109/ICONN.2006.340658

InGaAsN quantum dots for long wavelength lasers

Qiang Gao^*, Manuela Buda, Hoe Tan Hark, Chennupati Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InGaAsN quantum dots (QDs) were grown on (001) GaAs substrates by metalorganic chemical vapor deposition. Edge-emitting lasers based on this QD structure were fabricated and characterized. It was found that InGaAsN is easier to form QDs than InGaAs with the same nominal In content. InGaAsN laser devices lased at much shorter wavelength compared to the photoluminescence emission.

Original language	English
Title of host publication	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Pages	482-485
Number of pages	4
DOIs	https://doi.org/10.1109/ICONN.2006.340658
Publication status	Published - 2006
Event	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 - Brisbane, Australia Duration: 3 Jul 2006 → 6 Jul 2006

Publication series

Name	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

Conference

Conference	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006
Country/Territory	Australia
City	Brisbane
Period	3/07/06 → 6/07/06

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10.1109/ICONN.2006.340658

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@inproceedings{ee0fb7a2800b47afaedf365115bd55b3,

title = "InGaAsN quantum dots for long wavelength lasers",

abstract = "InGaAsN quantum dots (QDs) were grown on (001) GaAs substrates by metalorganic chemical vapor deposition. Edge-emitting lasers based on this QD structure were fabricated and characterized. It was found that InGaAsN is easier to form QDs than InGaAs with the same nominal In content. InGaAsN laser devices lased at much shorter wavelength compared to the photoluminescence emission.",

keywords = "InGaAsN, Laser, MOCVD, Quantum dots",

author = "Qiang Gao and Manuela Buda and Hark, {Hoe Tan} and Chennupati Jagadish",

year = "2006",

doi = "10.1109/ICONN.2006.340658",

language = "English",

isbn = "1424404533",

series = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

pages = "482--485",

booktitle = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

note = "2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 ; Conference date: 03-07-2006 Through 06-07-2006",

}

Gao, Q, Buda, M, Hark, HT & Jagadish, C 2006, InGaAsN quantum dots for long wavelength lasers. in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN., 4143438, Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 482-485, 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006, Brisbane, Australia, 3/07/06. https://doi.org/10.1109/ICONN.2006.340658

InGaAsN quantum dots for long wavelength lasers. / Gao, Qiang; Buda, Manuela; Hark, Hoe Tan et al.
Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. 2006. p. 482-485 4143438 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InGaAsN quantum dots for long wavelength lasers

AU - Gao, Qiang

AU - Buda, Manuela

AU - Hark, Hoe Tan

AU - Jagadish, Chennupati

PY - 2006

Y1 - 2006

N2 - InGaAsN quantum dots (QDs) were grown on (001) GaAs substrates by metalorganic chemical vapor deposition. Edge-emitting lasers based on this QD structure were fabricated and characterized. It was found that InGaAsN is easier to form QDs than InGaAs with the same nominal In content. InGaAsN laser devices lased at much shorter wavelength compared to the photoluminescence emission.

AB - InGaAsN quantum dots (QDs) were grown on (001) GaAs substrates by metalorganic chemical vapor deposition. Edge-emitting lasers based on this QD structure were fabricated and characterized. It was found that InGaAsN is easier to form QDs than InGaAs with the same nominal In content. InGaAsN laser devices lased at much shorter wavelength compared to the photoluminescence emission.

KW - InGaAsN

KW - Laser

KW - MOCVD

KW - Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=48749125939&partnerID=8YFLogxK

U2 - 10.1109/ICONN.2006.340658

DO - 10.1109/ICONN.2006.340658

M3 - Conference contribution

SN - 1424404533

SN - 9781424404537

T3 - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

SP - 482

EP - 485

BT - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

T2 - 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006

Y2 - 3 July 2006 through 6 July 2006

ER -

InGaAsN quantum dots for long wavelength lasers

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