InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure

Weilian Guo; Haitao Qi; Shilin Zhang; Ming Zhong; Huilai Liang; Luhong Mao; Ruiliang Song; Junming Zhou; Wenxin Wang; C. Jagadish; Lan Fu

InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure

Weilian Guo^*, Haitao Qi, Shilin Zhang, Ming Zhong, Huilai Liang, Luhong Mao, Ruiliang Song, Junming Zhou, Wenxin Wang, C. Jagadish, Lan Fu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

By using the NDR operation principle of silicon dual base transistor (DUBAT), referring to the features on structure of HBT and MBE material, this paper proposes the design and fabrication of a novel NDRHBT with a cut-off base structure. The parameters and characteristics measured from the fabricated devices demonstrate that the NDRHBT has good NDR characteristics and good device performance. In addition, the NDR effect that occurs in the negative current region and a light radiation have an effect on I-V characteristics. The results of device simulation for COBNDRHBT are in agreement with the measured results.

Original language	English
Pages (from-to)	1783-1788
Number of pages	6
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	26
Issue number	9
Publication status	Published - Sept 2005

Cite this

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title = "InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure",

abstract = "By using the NDR operation principle of silicon dual base transistor (DUBAT), referring to the features on structure of HBT and MBE material, this paper proposes the design and fabrication of a novel NDRHBT with a cut-off base structure. The parameters and characteristics measured from the fabricated devices demonstrate that the NDRHBT has good NDR characteristics and good device performance. In addition, the NDR effect that occurs in the negative current region and a light radiation have an effect on I-V characteristics. The results of device simulation for COBNDRHBT are in agreement with the measured results.",

keywords = "DUBAT, HBT, Logic function devices, Three terminal NDR device",

author = "Weilian Guo and Haitao Qi and Shilin Zhang and Ming Zhong and Huilai Liang and Luhong Mao and Ruiliang Song and Junming Zhou and Wenxin Wang and C. Jagadish and Lan Fu",

year = "2005",

month = sep,

language = "English",

volume = "26",

pages = "1783--1788",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

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TY - JOUR

T1 - InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure

AU - Guo, Weilian

AU - Qi, Haitao

AU - Zhang, Shilin

AU - Zhong, Ming

AU - Liang, Huilai

AU - Mao, Luhong

AU - Song, Ruiliang

AU - Zhou, Junming

AU - Wang, Wenxin

AU - Jagadish, C.

AU - Fu, Lan

PY - 2005/9

Y1 - 2005/9

N2 - By using the NDR operation principle of silicon dual base transistor (DUBAT), referring to the features on structure of HBT and MBE material, this paper proposes the design and fabrication of a novel NDRHBT with a cut-off base structure. The parameters and characteristics measured from the fabricated devices demonstrate that the NDRHBT has good NDR characteristics and good device performance. In addition, the NDR effect that occurs in the negative current region and a light radiation have an effect on I-V characteristics. The results of device simulation for COBNDRHBT are in agreement with the measured results.

AB - By using the NDR operation principle of silicon dual base transistor (DUBAT), referring to the features on structure of HBT and MBE material, this paper proposes the design and fabrication of a novel NDRHBT with a cut-off base structure. The parameters and characteristics measured from the fabricated devices demonstrate that the NDRHBT has good NDR characteristics and good device performance. In addition, the NDR effect that occurs in the negative current region and a light radiation have an effect on I-V characteristics. The results of device simulation for COBNDRHBT are in agreement with the measured results.

KW - DUBAT

KW - HBT

KW - Logic function devices

KW - Three terminal NDR device

UR - http://www.scopus.com/inward/record.url?scp=30044450639&partnerID=8YFLogxK

M3 - Article

SN - 0253-4177

VL - 26

SP - 1783

EP - 1788

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 9

ER -

InGaP/GaAs negative differential resistance heterojunction bipolar transistor with a new structure

Abstract

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