InP-based radial heterostructures grown on [100] nanowires

H. A. Fonseka; P. Caroff; Y. Guo; F. Wang; J. Wong-Leung; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2014.7038682

InP-based radial heterostructures grown on [100] nanowires

H. A. Fonseka^*, P. Caroff, Y. Guo, F. Wang, J. Wong-Leung, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InP-In_xGa_(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.

Original language	English
Title of host publication	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Editors	Mariusz Martyniuk, Lorenzo Faraone
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	168-170
Number of pages	3
ISBN (Electronic)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038682
Publication status	Published - 10 Feb 2014
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Publication series

Name	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Conference

Conference	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

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10.1109/COMMAD.2014.7038682

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Fonseka, H. A., Caroff, P., Guo, Y., Wang, F., Wong-Leung, J., Tan, H. H., & Jagadish, C. (2014). InP-based radial heterostructures grown on [100] nanowires. In M. Martyniuk, & L. Faraone (Eds.), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 (pp. 168-170). Article 7038682 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2014.7038682

Fonseka, H. A. ; Caroff, P. ; Guo, Y. et al. / InP-based radial heterostructures grown on [100] nanowires. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. editor / Mariusz Martyniuk ; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 168-170 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

@inproceedings{1c5f7d0224c140a588edefc5350a5639,

title = "InP-based radial heterostructures grown on [100] nanowires",

abstract = "InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.",

keywords = "Anisotropie facet growth, InGaAs, InP nanowires, Photoluminescence, Quantum well tube",

author = "Fonseka, {H. A.} and P. Caroff and Y. Guo and F. Wang and J. Wong-Leung and Tan, {H. H.} and C. Jagadish",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

year = "2014",

month = feb,

day = "10",

doi = "10.1109/COMMAD.2014.7038682",

language = "English",

series = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "168--170",

editor = "Mariusz Martyniuk and Lorenzo Faraone",

booktitle = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

address = "United States",

}

Fonseka, HA, Caroff, P, Guo, Y, Wang, F, Wong-Leung, J, Tan, HH & Jagadish, C 2014, InP-based radial heterostructures grown on [100] nanowires. in M Martyniuk & L Faraone (eds), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014., 7038682, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Institute of Electrical and Electronics Engineers Inc., pp. 168-170, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038682

InP-based radial heterostructures grown on [100] nanowires. / Fonseka, H. A.; Caroff, P.; Guo, Y. et al.
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. ed. / Mariusz Martyniuk; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. p. 168-170 7038682 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InP-based radial heterostructures grown on [100] nanowires

AU - Fonseka, H. A.

AU - Caroff, P.

AU - Guo, Y.

AU - Wang, F.

AU - Wong-Leung, J.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2014/2/10

Y1 - 2014/2/10

N2 - InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.

AB - InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.

KW - Anisotropie facet growth

KW - InGaAs

KW - InP nanowires

KW - Photoluminescence

KW - Quantum well tube

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U2 - 10.1109/COMMAD.2014.7038682

DO - 10.1109/COMMAD.2014.7038682

M3 - Conference contribution

T3 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

SP - 168

EP - 170

BT - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

A2 - Martyniuk, Mariusz

A2 - Faraone, Lorenzo

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Y2 - 14 December 2014 through 17 December 2014

ER -

Fonseka HA, Caroff P, Guo Y, Wang F, Wong-Leung J, Tan HH et al. InP-based radial heterostructures grown on [100] nanowires. In Martyniuk M, Faraone L, editors, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 168-170. 7038682. (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). doi: 10.1109/COMMAD.2014.7038682

InP-based radial heterostructures grown on [100] nanowires

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