InP nanowires grown by SA-MOVPE

Q. Gao; H. H. Tan; L. Fu; P. Parkinson; S. Breuer; J. Wong-Leung; C. Jagadish

doi:10.1109/COMMAD.2012.6472352

InP nanowires grown by SA-MOVPE

Q. Gao^*, H. H. Tan, L. Fu, P. Parkinson, S. Breuer, J. Wong-Leung, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	45-46
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472352
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472352

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Gao, Q., Tan, H. H., Fu, L., Parkinson, P., Breuer, S., Wong-Leung, J., & Jagadish, C. (2012). InP nanowires grown by SA-MOVPE. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 45-46). Article 6472352 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472352

@inproceedings{628064db7afe4d42881698932688e410,

title = "InP nanowires grown by SA-MOVPE",

abstract = "A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.",

author = "Q. Gao and Tan, {H. H.} and L. Fu and P. Parkinson and S. Breuer and J. Wong-Leung and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472352",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "45--46",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Gao, Q, Tan, HH , Fu, L, Parkinson, P, Breuer, S, Wong-Leung, J & Jagadish, C 2012, InP nanowires grown by SA-MOVPE. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472352, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 45-46, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472352

InP nanowires grown by SA-MOVPE. / Gao, Q.; Tan, H. H.; Fu, L. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 45-46 6472352 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InP nanowires grown by SA-MOVPE

AU - Gao, Q.

AU - Tan, H. H.

AU - Fu, L.

AU - Parkinson, P.

AU - Breuer, S.

AU - Wong-Leung, J.

AU - Jagadish, C.

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AB - A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.

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U2 - 10.1109/COMMAD.2012.6472352

DO - 10.1109/COMMAD.2012.6472352

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

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BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

InP nanowires grown by SA-MOVPE

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