InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation

V. Ramesh; Q. Gao; H. H. Tan; S. Paiman; Y. N. Guo; J. Zou; C. Jagadish

doi:10.1109/COMMAD.2010.5699792

InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation

V. Ramesh^*, Q. Gao, H. H. Tan, S. Paiman, Y. N. Guo, J. Zou, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition (MOCVD). The grown nanowires are distributed uniformly and are vertical to the substrate. The coreshell nanowires have been structurally characterised by scanning electron microscopy and transmission electron microscopy.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	83-84
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699792
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699792

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Ramesh, V., Gao, Q., Tan, H. H., Paiman, S., Guo, Y. N., Zou, J., & Jagadish, C. (2010). InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 83-84). Article 5699792 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699792

@inproceedings{aea17bb4eec2414397c87f1014bfdf5e,

title = "InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation",

abstract = "We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition (MOCVD). The grown nanowires are distributed uniformly and are vertical to the substrate. The coreshell nanowires have been structurally characterised by scanning electron microscopy and transmission electron microscopy.",

author = "V. Ramesh and Q. Gao and Tan, {H. H.} and S. Paiman and Guo, {Y. N.} and J. Zou and C. Jagadish",

year = "2010",

doi = "10.1109/COMMAD.2010.5699792",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "83--84",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Ramesh, V, Gao, Q, Tan, HH, Paiman, S, Guo, YN, Zou, J & Jagadish, C 2010, InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699792, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 83-84, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699792

InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation. / Ramesh, V.; Gao, Q.; Tan, H. H. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 83-84 5699792 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InP/InGaAs coreshell nanowire heterostructures

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

AU - Ramesh, V.

AU - Gao, Q.

AU - Tan, H. H.

AU - Paiman, S.

AU - Guo, Y. N.

AU - Zou, J.

AU - Jagadish, C.

PY - 2010

Y1 - 2010

N2 - We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition (MOCVD). The grown nanowires are distributed uniformly and are vertical to the substrate. The coreshell nanowires have been structurally characterised by scanning electron microscopy and transmission electron microscopy.

AB - We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition (MOCVD). The grown nanowires are distributed uniformly and are vertical to the substrate. The coreshell nanowires have been structurally characterised by scanning electron microscopy and transmission electron microscopy.

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U2 - 10.1109/COMMAD.2010.5699792

DO - 10.1109/COMMAD.2010.5699792

M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 83

EP - 84

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

Y2 - 12 December 2010 through 15 December 2010

ER -

Ramesh V, Gao Q, Tan HH, Paiman S, Guo YN, Zou J et al. InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 83-84. 5699792. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699792

InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation

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