Insights for void formation in ion-implanted Ge

B. L. Darby; B. R. Yates; N. G. Rudawski; K. S. Jones; A. Kontos; R. G. Elliman

doi:10.1016/j.tsf.2011.03.040

Insights for void formation in ion-implanted Ge

B. L. Darby, B. R. Yates, N. G. Rudawski, K. S. Jones, A. Kontos, R. G. Elliman

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Abstract

The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20-300 keV to doses of 1.0 × 10¹³-1.0 × 10¹⁷ cm^{- 2}. Transmission electron microscopy revealed clusters of voids just below the surface for implant energies ≤ 120 keV at a dose of 2.0 × 10¹⁵ cm^{- 2} and complete surface coverage for an implant energy of 130 keV and doses ≥ 1.0 × 10 ¹⁶ cm^{- 2}. Void clusters did not change in size or density after isothermal annealing at 330 °C for 176 min. The initial void formation is discussed in terms of the vacancy clustering and "microexplosion" theories with a damage map detailing the implant conditions necessary to produce voids.

Original language	English
Pages (from-to)	5962-5965
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	18
DOIs	https://doi.org/10.1016/j.tsf.2011.03.040
Publication status	Published - 1 Jul 2011

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title = "Insights for void formation in ion-implanted Ge",

abstract = "The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20-300 keV to doses of 1.0 × 1013-1.0 × 1017 cm- 2. Transmission electron microscopy revealed clusters of voids just below the surface for implant energies ≤ 120 keV at a dose of 2.0 × 1015 cm- 2 and complete surface coverage for an implant energy of 130 keV and doses ≥ 1.0 × 10 16 cm- 2. Void clusters did not change in size or density after isothermal annealing at 330 °C for 176 min. The initial void formation is discussed in terms of the vacancy clustering and {"}microexplosion{"} theories with a damage map detailing the implant conditions necessary to produce voids.",

keywords = "Annealing, Germanium, Ion implantation, Transmission electron microscopy, Voids",

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T1 - Insights for void formation in ion-implanted Ge

AU - Darby, B. L.

AU - Yates, B. R.

AU - Rudawski, N. G.

AU - Jones, K. S.

AU - Kontos, A.

AU - Elliman, R. G.

PY - 2011/7/1

Y1 - 2011/7/1

N2 - The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20-300 keV to doses of 1.0 × 1013-1.0 × 1017 cm- 2. Transmission electron microscopy revealed clusters of voids just below the surface for implant energies ≤ 120 keV at a dose of 2.0 × 1015 cm- 2 and complete surface coverage for an implant energy of 130 keV and doses ≥ 1.0 × 10 16 cm- 2. Void clusters did not change in size or density after isothermal annealing at 330 °C for 176 min. The initial void formation is discussed in terms of the vacancy clustering and "microexplosion" theories with a damage map detailing the implant conditions necessary to produce voids.

AB - The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20-300 keV to doses of 1.0 × 1013-1.0 × 1017 cm- 2. Transmission electron microscopy revealed clusters of voids just below the surface for implant energies ≤ 120 keV at a dose of 2.0 × 1015 cm- 2 and complete surface coverage for an implant energy of 130 keV and doses ≥ 1.0 × 10 16 cm- 2. Void clusters did not change in size or density after isothermal annealing at 330 °C for 176 min. The initial void formation is discussed in terms of the vacancy clustering and "microexplosion" theories with a damage map detailing the implant conditions necessary to produce voids.

KW - Annealing

KW - Germanium

KW - Ion implantation

KW - Transmission electron microscopy

KW - Voids

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JO - Thin Solid Films

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Insights for void formation in ion-implanted Ge

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