Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence

Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, Chennupati Jagadish

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    35 Citations (Scopus)

    Abstract

    We review a number of time-resolved photoluminescence experiments which have provided new understanding of the physical properties of single nanowires and single semiconductor nanowire heterostructures. Specifically, TRPL spectroscopy has been used to understand more fully non-radiative surface and bulk defects, radiative defects in CdS, InP and GaAs nanowires, core-shell effects, polytypism in InP nanowires, many body effects in GaAs and InP nanowires, and type-II band alignments in ZB/WZ mixed phase nanowires.

    Original languageEnglish
    Article number024010
    JournalSemiconductor Science and Technology
    Volume25
    Issue number2
    DOIs
    Publication statusPublished - 2010

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