Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence

Leigh M. Smith; Howard E. Jackson; Jan M. Yarrison-Rice; Chennupati Jagadish

doi:10.1088/0268-1242/25/2/024010

Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence

Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, Chennupati Jagadish

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

We review a number of time-resolved photoluminescence experiments which have provided new understanding of the physical properties of single nanowires and single semiconductor nanowire heterostructures. Specifically, TRPL spectroscopy has been used to understand more fully non-radiative surface and bulk defects, radiative defects in CdS, InP and GaAs nanowires, core-shell effects, polytypism in InP nanowires, many body effects in GaAs and InP nanowires, and type-II band alignments in ZB/WZ mixed phase nanowires.

Original language	English
Article number	024010
Journal	Semiconductor Science and Technology
Volume	25
Issue number	2
DOIs	https://doi.org/10.1088/0268-1242/25/2/024010
Publication status	Published - 2010

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abstract = "We review a number of time-resolved photoluminescence experiments which have provided new understanding of the physical properties of single nanowires and single semiconductor nanowire heterostructures. Specifically, TRPL spectroscopy has been used to understand more fully non-radiative surface and bulk defects, radiative defects in CdS, InP and GaAs nanowires, core-shell effects, polytypism in InP nanowires, many body effects in GaAs and InP nanowires, and type-II band alignments in ZB/WZ mixed phase nanowires.",

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AU - Jagadish, Chennupati

PY - 2010

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AB - We review a number of time-resolved photoluminescence experiments which have provided new understanding of the physical properties of single nanowires and single semiconductor nanowire heterostructures. Specifically, TRPL spectroscopy has been used to understand more fully non-radiative surface and bulk defects, radiative defects in CdS, InP and GaAs nanowires, core-shell effects, polytypism in InP nanowires, many body effects in GaAs and InP nanowires, and type-II band alignments in ZB/WZ mixed phase nanowires.

UR - https://www.scopus.com/pages/publications/76749102926

U2 - 10.1088/0268-1242/25/2/024010

DO - 10.1088/0268-1242/25/2/024010

M3 - Article

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Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence

Abstract

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