Instability of nanocavities in amorphous silicon

Xianfang Zhu; J. S. Williams; D. J. Llewellyn; J. C. McCallum

doi:10.1063/1.123835

Instability of nanocavities in amorphous silicon

Xianfang Zhu, J. S. Williams, D. J. Llewellyn, J. C. McCallum

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Abstract

The influence of implant-induced amorphization and its subsequent solid phase epitaxial growth (SPEG) on the stability of nanocavities in Si was investigated. To monitor the gettering efficiency of cavities, gold was introduced to the wafer before and after amorphization. Rutherford backscattering (RBS) and channeling combined with cross-sectional transmission electron microscopy were used to characterize the samples. The structural observations were also correlated with kinetic data from in situ SPEG measurements carried out using time-resolved reflectivity (TRR).

Original language	English
Pages (from-to)	2313-2315
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	16
DOIs	https://doi.org/10.1063/1.123835
Publication status	Published - 19 Apr 1999

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AB - The influence of implant-induced amorphization and its subsequent solid phase epitaxial growth (SPEG) on the stability of nanocavities in Si was investigated. To monitor the gettering efficiency of cavities, gold was introduced to the wafer before and after amorphization. Rutherford backscattering (RBS) and channeling combined with cross-sectional transmission electron microscopy were used to characterize the samples. The structural observations were also correlated with kinetic data from in situ SPEG measurements carried out using time-resolved reflectivity (TRR).

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Instability of nanocavities in amorphous silicon

Abstract

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