Instability of nanocavities in disordered and amorphous silicon under ion irradiation

X. Zhu; J. S. Williams; J. C. McCallum

doi:10.1557/PROC-540-127

Instability of nanocavities in disordered and amorphous silicon under ion irradiation

X. Zhu^*, J. S. Williams, J. C. McCallum

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

It has recently been shown that a band of nanocavities in crystalline silicon is eliminated during amorphization of the silicon surrounding this band [4]. In this study, we examine the effect of irradiation dose on nanocavity stability. Gettering of Au is used as a detector for open volume defects following annealing of irradiated samples. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy have been used to analyse the samples. Cavities are only completely removed when the region surrounding the cavities is totally amorphized up to the surface. Partial amorphization leaves residual open volume defects.

Original language	English
Pages (from-to)	127-132
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	540
DOIs	https://doi.org/10.1557/PROC-540-127
Publication status	Published - 1999

Access to Document

10.1557/PROC-540-127

Cite this

@article{5a3ac71d24ac4029b681c61e55b39409,

title = "Instability of nanocavities in disordered and amorphous silicon under ion irradiation",

abstract = "It has recently been shown that a band of nanocavities in crystalline silicon is eliminated during amorphization of the silicon surrounding this band [4]. In this study, we examine the effect of irradiation dose on nanocavity stability. Gettering of Au is used as a detector for open volume defects following annealing of irradiated samples. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy have been used to analyse the samples. Cavities are only completely removed when the region surrounding the cavities is totally amorphized up to the surface. Partial amorphization leaves residual open volume defects.",

author = "X. Zhu and Williams, {J. S.} and McCallum, {J. C.}",

year = "1999",

doi = "10.1557/PROC-540-127",

language = "English",

volume = "540",

pages = "127--132",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Instability of nanocavities in disordered and amorphous silicon under ion irradiation

AU - Zhu, X.

AU - Williams, J. S.

AU - McCallum, J. C.

PY - 1999

Y1 - 1999

N2 - It has recently been shown that a band of nanocavities in crystalline silicon is eliminated during amorphization of the silicon surrounding this band [4]. In this study, we examine the effect of irradiation dose on nanocavity stability. Gettering of Au is used as a detector for open volume defects following annealing of irradiated samples. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy have been used to analyse the samples. Cavities are only completely removed when the region surrounding the cavities is totally amorphized up to the surface. Partial amorphization leaves residual open volume defects.

AB - It has recently been shown that a band of nanocavities in crystalline silicon is eliminated during amorphization of the silicon surrounding this band [4]. In this study, we examine the effect of irradiation dose on nanocavity stability. Gettering of Au is used as a detector for open volume defects following annealing of irradiated samples. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy have been used to analyse the samples. Cavities are only completely removed when the region surrounding the cavities is totally amorphized up to the surface. Partial amorphization leaves residual open volume defects.

UR - http://www.scopus.com/inward/record.url?scp=0032592205&partnerID=8YFLogxK

U2 - 10.1557/PROC-540-127

DO - 10.1557/PROC-540-127

M3 - Article

SN - 0272-9172

VL - 540

SP - 127

EP - 132

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Instability of nanocavities in disordered and amorphous silicon under ion irradiation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this