In0.5 Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

L. Fu.; P. Lever; K. Sears; H. H. Tan; C. Jagadish

doi:10.1109/LED.2005.853635

In_0.5 Ga_0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

L. Fu.^*, P. Lever, K. Sears, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In_0.5 Ga_0.5 As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 μm. The 77-K peak responsivit was 5.6 mA/W with the detectivity D* of 1.2 × 10⁹ cm · Hz^1/2/W at the bias of 0.4 V.

Original language	English
Pages (from-to)	628-630
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	9
DOIs	https://doi.org/10.1109/LED.2005.853635
Publication status	Published - Sept 2005

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@article{843661f7c2634839998c07c3f62ee308,

title = "In0.5 Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition",

abstract = "We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In0.5 Ga0.5 As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 μm. The 77-K peak responsivit was 5.6 mA/W with the detectivity D* of 1.2 × 109 cm · Hz1/2/W at the bias of 0.4 V.",

keywords = "Infrared photodetectors, Metal-organic chemical vapor deposition (MOCVD), Quantum dot infrared photodetectors (QDIPs), Quantum dots",

author = "L. Fu. and P. Lever and K. Sears and Tan, {H. H.} and C. Jagadish",

year = "2005",

month = sep,

doi = "10.1109/LED.2005.853635",

language = "English",

volume = "26",

pages = "628--630",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - In0.5 Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

AU - Fu., L.

AU - Lever, P.

AU - Sears, K.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2005/9

Y1 - 2005/9

N2 - We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In0.5 Ga0.5 As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 μm. The 77-K peak responsivit was 5.6 mA/W with the detectivity D* of 1.2 × 109 cm · Hz1/2/W at the bias of 0.4 V.

AB - We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In0.5 Ga0.5 As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 μm. The 77-K peak responsivit was 5.6 mA/W with the detectivity D* of 1.2 × 109 cm · Hz1/2/W at the bias of 0.4 V.

KW - Infrared photodetectors

KW - Metal-organic chemical vapor deposition (MOCVD)

KW - Quantum dot infrared photodetectors (QDIPs)

KW - Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=26444503063&partnerID=8YFLogxK

U2 - 10.1109/LED.2005.853635

DO - 10.1109/LED.2005.853635

M3 - Article

SN - 0741-3106

VL - 26

SP - 628

EP - 630

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

In_0.5 Ga_0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

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