Integration of an InGaAs quantum-dot laser with a low-loss passive waveguide using selective-area epitaxy

S. Mokkapati; H. H. Tan; C. Jagadish

doi:10.1109/LPT.2006.879531

Integration of an InGaAs quantum-dot laser with a low-loss passive waveguide using selective-area epitaxy

S. Mokkapati^*, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

An InGaAs quantum-dot (QD) laser integrated with a low- losswaveguideisdemonstrated. Selective-areaepitaxy isusedto simultaneously form the QDs that form the active region of the laser and quantum wells (QWs) that form the waveguide section of the integrated devices.Thelosses in the activeand passive sections of the integrated devices are 6 and 3 cm^-1, respectively. Very low losses in the waveguide section are due to a large difference of 200 meV in the bandgap energies of the selectively grown QDs and QWs.

Original language	English
Pages (from-to)	1648-1650
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	15
DOIs	https://doi.org/10.1109/LPT.2006.879531
Publication status	Published - 1 Aug 2006

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title = "Integration of an InGaAs quantum-dot laser with a low-loss passive waveguide using selective-area epitaxy",

abstract = "An InGaAs quantum-dot (QD) laser integrated with a low- losswaveguideisdemonstrated. Selective-areaepitaxy isusedto simultaneously form the QDs that form the active region of the laser and quantum wells (QWs) that form the waveguide section of the integrated devices.Thelosses in the activeand passive sections of the integrated devices are 6 and 3 cm-1, respectively. Very low losses in the waveguide section are due to a large difference of 200 meV in the bandgap energies of the selectively grown QDs and QWs.",

keywords = "Integrated optoelectronics, Quantum dots (QDs), Selective-area epitaxy (SAE), Semiconductor lasers",

author = "S. Mokkapati and Tan, {H. H.} and C. Jagadish",

year = "2006",

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doi = "10.1109/LPT.2006.879531",

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AU - Mokkapati, S.

AU - Tan, H. H.

AU - Jagadish, C.

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AB - An InGaAs quantum-dot (QD) laser integrated with a low- losswaveguideisdemonstrated. Selective-areaepitaxy isusedto simultaneously form the QDs that form the active region of the laser and quantum wells (QWs) that form the waveguide section of the integrated devices.Thelosses in the activeand passive sections of the integrated devices are 6 and 3 cm-1, respectively. Very low losses in the waveguide section are due to a large difference of 200 meV in the bandgap energies of the selectively grown QDs and QWs.

KW - Integrated optoelectronics

KW - Quantum dots (QDs)

KW - Selective-area epitaxy (SAE)

KW - Semiconductor lasers

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 15

ER -

Integration of an InGaAs quantum-dot laser with a low-loss passive waveguide using selective-area epitaxy

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