Integration of quantum dot devices by selective area epitaxy

S. Mokkapati; H. H. Tan; C. Jagadish; K. E. McBean; M. R. Phillips

doi:10.1109/ICONN.2006.340648

Integration of quantum dot devices by selective area epitaxy

S. Mokkapati^*, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO₂) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

Original language	English
Title of host publication	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Pages	442-445
Number of pages	4
DOIs	https://doi.org/10.1109/ICONN.2006.340648
Publication status	Published - 2006
Event	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 - Brisbane, Australia Duration: 3 Jul 2006 → 6 Jul 2006

Publication series

Name	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

Conference

Conference	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006
Country/Territory	Australia
City	Brisbane
Period	3/07/06 → 6/07/06

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10.1109/ICONN.2006.340648

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Mokkapati, S., Tan, H. H., Jagadish, C., McBean, K. E., & Phillips, M. R. (2006). Integration of quantum dot devices by selective area epitaxy. In Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN (pp. 442-445). Article 4143428 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN). https://doi.org/10.1109/ICONN.2006.340648

@inproceedings{58d34360754c4fa8ad7d06c89f1013fd,

title = "Integration of quantum dot devices by selective area epitaxy",

abstract = "The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.",

keywords = "Integrated optoelectronic devices, Quantum dots, Selective area epitaxy",

author = "S. Mokkapati and Tan, {H. H.} and C. Jagadish and McBean, {K. E.} and Phillips, {M. R.}",

year = "2006",

doi = "10.1109/ICONN.2006.340648",

language = "English",

isbn = "1424404533",

series = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

pages = "442--445",

booktitle = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

note = "2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 ; Conference date: 03-07-2006 Through 06-07-2006",

}

Mokkapati, S, Tan, HH , Jagadish, C, McBean, KE & Phillips, MR 2006, Integration of quantum dot devices by selective area epitaxy. in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN., 4143428, Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 442-445, 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006, Brisbane, Australia, 3/07/06. https://doi.org/10.1109/ICONN.2006.340648

Integration of quantum dot devices by selective area epitaxy. / Mokkapati, S.; Tan, H. H.; Jagadish, C. et al.
Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. 2006. p. 442-445 4143428 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Integration of quantum dot devices by selective area epitaxy

AU - Mokkapati, S.

AU - Tan, H. H.

AU - Jagadish, C.

AU - McBean, K. E.

AU - Phillips, M. R.

PY - 2006

Y1 - 2006

N2 - The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

AB - The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

KW - Integrated optoelectronic devices

KW - Quantum dots

KW - Selective area epitaxy

UR - http://www.scopus.com/inward/record.url?scp=48749099121&partnerID=8YFLogxK

U2 - 10.1109/ICONN.2006.340648

DO - 10.1109/ICONN.2006.340648

M3 - Conference contribution

SN - 1424404533

SN - 9781424404537

T3 - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

SP - 442

EP - 445

BT - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

T2 - 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006

Y2 - 3 July 2006 through 6 July 2006

ER -

Integration of quantum dot devices by selective area epitaxy

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