Abstract
Proton implantation and rapid thermal annealing were used to tune the infrared spectral response of quantum-well infrared photodetectors (QWIP) by up to 1.4 μm. Multiple proton implants at energies between 200 and 420 keV were used to create homogeneous quantum-well intermixing throughout the device's multiple-quantum-well structure. Photoluminescence and spectral response measurements were used to study the effect of proton implantation on QWIPs for a series of doses up to 3.5 X 1015 protons cm-2. By using a mask during implantation, a method of constructing a color sensitive array is proposed.
Original language | English |
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Pages (from-to) | 923-925 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 7 |
DOIs | |
Publication status | Published - 16 Aug 1999 |