@inproceedings{43ee0d128b3940e0aded190c8ab2748b,
title = "Interdiffusion in InGaAs quantum dots by ion implantation",
abstract = "Implantation induced interdiffusion of InGaAs quantum dots has been carried out using hydrogen and arsenic ions. Large energy shifts and significant narrowing was seen in the photolurninescence spectra of the implanted and annealed samples. Lower implantation doses were required to create similar energy shifts in quantum dot samples than reported in the quantum well case. The energy shifts and photolurninescence intensities were found to depend on the ions used, as well as the amount of damage created in the samples. Temperature dependent implantations were found to follow the trends reported for quantum wells.",
author = "P. Lever and Tan, {H. H.} and P. Reece and M. Gal and C. Jagadish",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",
year = "2002",
doi = "10.1109/COMMAD.2002.1237303",
language = "English",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "515--518",
editor = "Michael Gal",
booktitle = "2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings",
address = "United States",
}