Interface creation and stress dynamics in plasma-deposited silicon dioxide films

V. Au; C. Charles; R. W. Boswell

doi:10.1063/1.2210085

Interface creation and stress dynamics in plasma-deposited silicon dioxide films

V. Au^*, C. Charles, R. W. Boswell

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The stress in amorphous silicon dioxide film grown by plasma-assisted deposition was investigated both during and after film growth for continuously and intermittently deposited films. It is shown that an intermittent deposition leads to the creation of interfacial regions during film growth, but also causes dynamical structural change in already-deposited film which results in a significantly different stress-thickness profile measured after deposition. Film growth in the continuously deposited film was also monitored using an in situ laser reflection technique, and a strong change in stress was detected at about 145 nm which was attributed to the onset of island coalescence.

Original language	English
Article number	234103
Journal	Applied Physics Letters
Volume	88
Issue number	23
DOIs	https://doi.org/10.1063/1.2210085
Publication status	Published - 5 Jun 2006

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abstract = "The stress in amorphous silicon dioxide film grown by plasma-assisted deposition was investigated both during and after film growth for continuously and intermittently deposited films. It is shown that an intermittent deposition leads to the creation of interfacial regions during film growth, but also causes dynamical structural change in already-deposited film which results in a significantly different stress-thickness profile measured after deposition. Film growth in the continuously deposited film was also monitored using an in situ laser reflection technique, and a strong change in stress was detected at about 145 nm which was attributed to the onset of island coalescence.",

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AB - The stress in amorphous silicon dioxide film grown by plasma-assisted deposition was investigated both during and after film growth for continuously and intermittently deposited films. It is shown that an intermittent deposition leads to the creation of interfacial regions during film growth, but also causes dynamical structural change in already-deposited film which results in a significantly different stress-thickness profile measured after deposition. Film growth in the continuously deposited film was also monitored using an in situ laser reflection technique, and a strong change in stress was detected at about 145 nm which was attributed to the onset of island coalescence.

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Interface creation and stress dynamics in plasma-deposited silicon dioxide films

Abstract

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