Interface stability in stressed solid-phase epitaxial growth

S. Morarka; S. Jin; N. G. Rudawski; K. S. Jones; M. E. Law; R. G. Elliman

doi:10.1116/1.3610172

Interface stability in stressed solid-phase epitaxial growth

S. Morarka, S. Jin, N. G. Rudawski^*, K. S. Jones, M. E. Law, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The role of applied stress on interface stability during Si solid-phase epitaxial growth was investigated. Transmission electron microscopy observations of growth interface evolution revealed in-plane uniaxial compression (tension) led to interface instability (stability). Additionally, level set simulations revealed that the stress-influenced interface instability was accurately modeled by adjusting the strength of the linear dependence of local interface velocity (rate of change of interface position with respect to time) on local interface curvature proposed in previous work. This behavior is explained in terms of tension in the growth interface controlling interface stability during growth; it is argued that compressive (tensile) stress tends to reduce (enhance) interfacial tension and results in interfacial instability (stability) during growth.

Original language	English
Article number	041210
Journal	Journal of Vacuum Science and Technology B
Volume	29
Issue number	4
DOIs	https://doi.org/10.1116/1.3610172
Publication status	Published - Jul 2011

Access to Document

10.1116/1.3610172

Cite this

@article{133529e71a5144ce91ba8cbb647c9649,

title = "Interface stability in stressed solid-phase epitaxial growth",

abstract = "The role of applied stress on interface stability during Si solid-phase epitaxial growth was investigated. Transmission electron microscopy observations of growth interface evolution revealed in-plane uniaxial compression (tension) led to interface instability (stability). Additionally, level set simulations revealed that the stress-influenced interface instability was accurately modeled by adjusting the strength of the linear dependence of local interface velocity (rate of change of interface position with respect to time) on local interface curvature proposed in previous work. This behavior is explained in terms of tension in the growth interface controlling interface stability during growth; it is argued that compressive (tensile) stress tends to reduce (enhance) interfacial tension and results in interfacial instability (stability) during growth.",

author = "S. Morarka and S. Jin and Rudawski, {N. G.} and Jones, {K. S.} and Law, {M. E.} and Elliman, {R. G.}",

year = "2011",

month = jul,

doi = "10.1116/1.3610172",

language = "English",

volume = "29",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Interface stability in stressed solid-phase epitaxial growth

AU - Morarka, S.

AU - Jin, S.

AU - Rudawski, N. G.

AU - Jones, K. S.

AU - Law, M. E.

AU - Elliman, R. G.

PY - 2011/7

Y1 - 2011/7

N2 - The role of applied stress on interface stability during Si solid-phase epitaxial growth was investigated. Transmission electron microscopy observations of growth interface evolution revealed in-plane uniaxial compression (tension) led to interface instability (stability). Additionally, level set simulations revealed that the stress-influenced interface instability was accurately modeled by adjusting the strength of the linear dependence of local interface velocity (rate of change of interface position with respect to time) on local interface curvature proposed in previous work. This behavior is explained in terms of tension in the growth interface controlling interface stability during growth; it is argued that compressive (tensile) stress tends to reduce (enhance) interfacial tension and results in interfacial instability (stability) during growth.

AB - The role of applied stress on interface stability during Si solid-phase epitaxial growth was investigated. Transmission electron microscopy observations of growth interface evolution revealed in-plane uniaxial compression (tension) led to interface instability (stability). Additionally, level set simulations revealed that the stress-influenced interface instability was accurately modeled by adjusting the strength of the linear dependence of local interface velocity (rate of change of interface position with respect to time) on local interface curvature proposed in previous work. This behavior is explained in terms of tension in the growth interface controlling interface stability during growth; it is argued that compressive (tensile) stress tends to reduce (enhance) interfacial tension and results in interfacial instability (stability) during growth.

UR - http://www.scopus.com/inward/record.url?scp=80051880481&partnerID=8YFLogxK

U2 - 10.1116/1.3610172

DO - 10.1116/1.3610172

M3 - Article

SN - 2166-2746

VL - 29

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 4

M1 - 041210

ER -

Interface stability in stressed solid-phase epitaxial growth

Abstract

Access to Document

Other files and links

Fingerprint

Cite this