Intermixing induced resonance shift in GaAs/Al xO y DBR resonators

M. I. Cohen; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.1998.791664

Intermixing induced resonance shift in GaAs/Al _xO _y DBR resonators

M. I. Cohen^*, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

The effect of ion induced interdiffusion on the resonant wavelength of GaAs/Al _xO _y DBRs is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to red-shift. Resonance shifts of greater than 30 nm were observed. A model is proposed to explain this behaviour. This model agrees well with previous lateral oxidation studies.

Original language	English
Pages	365-368
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.1998.791664
Publication status	Published - 1999
Event	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 14 Dec 1998 → 16 Dec 1998

Conference

Conference	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
City	Perth, WA, Aust
Period	14/12/98 → 16/12/98

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10.1109/COMMAD.1998.791664

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@conference{6180c807ef28442885c3f7de8355cd62,

title = "Intermixing induced resonance shift in GaAs/Al xO y DBR resonators",

abstract = "The effect of ion induced interdiffusion on the resonant wavelength of GaAs/Al xO y DBRs is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to red-shift. Resonance shifts of greater than 30 nm were observed. A model is proposed to explain this behaviour. This model agrees well with previous lateral oxidation studies.",

author = "Cohen, \{M. I.\} and Tan, \{H. H.\} and C. Jagadish",

year = "1999",

doi = "10.1109/COMMAD.1998.791664",

language = "English",

pages = "365--368",

note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

}

TY - CONF

T1 - Intermixing induced resonance shift in GaAs/Al xO y DBR resonators

AU - Cohen, M. I.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 1999

Y1 - 1999

N2 - The effect of ion induced interdiffusion on the resonant wavelength of GaAs/Al xO y DBRs is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to red-shift. Resonance shifts of greater than 30 nm were observed. A model is proposed to explain this behaviour. This model agrees well with previous lateral oxidation studies.

AB - The effect of ion induced interdiffusion on the resonant wavelength of GaAs/Al xO y DBRs is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to red-shift. Resonance shifts of greater than 30 nm were observed. A model is proposed to explain this behaviour. This model agrees well with previous lateral oxidation studies.

UR - https://www.scopus.com/pages/publications/0032664689

U2 - 10.1109/COMMAD.1998.791664

DO - 10.1109/COMMAD.1998.791664

M3 - Paper

AN - SCOPUS:0032664689

SP - 365

EP - 368

T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 14 December 1998 through 16 December 1998

ER -

Intermixing induced resonance shift in GaAs/Al _xO _y DBR resonators

Abstract

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