Intermixing-induced resonance shift in GaAs/AlxOy distributed Bragg resonators

M. I. Cohen; H. H. Tan; C. Jagadish

doi:10.1063/1.370616

Intermixing-induced resonance shift in GaAs/Al_xO_y distributed Bragg resonators

M. I. Cohen^*, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The effect of ion implantation-induced interdiffusion on the resonant wavelength of GaAs/Al_xO_y distributed Bragg reflectors is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to redshift. Shifts of more than 60 nm could be achieved for center wavelengths around 800 nm. A model is proposed to explain this behavior. This model agrees well with previous lateral oxidation studies.

Original language	English
Pages (from-to)	7964-7966
Number of pages	3
Journal	Journal of Applied Physics
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.370616
Publication status	Published - Jun 1999

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@article{c010db0a3d0b443382846cce28e8ed3e,

title = "Intermixing-induced resonance shift in GaAs/AlxOy distributed Bragg resonators",

abstract = "The effect of ion implantation-induced interdiffusion on the resonant wavelength of GaAs/AlxOy distributed Bragg reflectors is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to redshift. Shifts of more than 60 nm could be achieved for center wavelengths around 800 nm. A model is proposed to explain this behavior. This model agrees well with previous lateral oxidation studies.",

author = "Cohen, {M. I.} and Tan, {H. H.} and C. Jagadish",

year = "1999",

month = jun,

doi = "10.1063/1.370616",

language = "English",

volume = "85",

pages = "7964--7966",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Intermixing-induced resonance shift in GaAs/AlxOy distributed Bragg resonators

AU - Cohen, M. I.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 1999/6

Y1 - 1999/6

N2 - The effect of ion implantation-induced interdiffusion on the resonant wavelength of GaAs/AlxOy distributed Bragg reflectors is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to redshift. Shifts of more than 60 nm could be achieved for center wavelengths around 800 nm. A model is proposed to explain this behavior. This model agrees well with previous lateral oxidation studies.

AB - The effect of ion implantation-induced interdiffusion on the resonant wavelength of GaAs/AlxOy distributed Bragg reflectors is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to redshift. Shifts of more than 60 nm could be achieved for center wavelengths around 800 nm. A model is proposed to explain this behavior. This model agrees well with previous lateral oxidation studies.

UR - http://www.scopus.com/inward/record.url?scp=0041758591&partnerID=8YFLogxK

U2 - 10.1063/1.370616

DO - 10.1063/1.370616

M3 - Article

SN - 0021-8979

VL - 85

SP - 7964

EP - 7966

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Intermixing-induced resonance shift in GaAs/Al_xO_y distributed Bragg resonators

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