Internal gain in Er-doped As2S3 chalcogenide planar waveguides

Kunlun Yan*, Khu Vu, Steve Madden

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    27 Citations (Scopus)

    Abstract

    Low-loss erbium-doped As2S3 planar waveguides are fabricated by cothermal evaporation and plasma etching. Internal gain in the telecommunications band is demonstrated for the first time in any chalcogenide glass and additionally in a thin film planar waveguide amplifier configuration.

    Original languageEnglish
    Pages (from-to)796-799
    Number of pages4
    JournalOptics Letters
    Volume40
    Issue number5
    DOIs
    Publication statusPublished - 1 Mar 2015

    Fingerprint

    Dive into the research topics of 'Internal gain in Er-doped As2S3 chalcogenide planar waveguides'. Together they form a unique fingerprint.

    Cite this