Abstract
Low-loss erbium-doped As2S3 planar waveguides are fabricated by cothermal evaporation and plasma etching. Internal gain in the telecommunications band is demonstrated for the first time in any chalcogenide glass and additionally in a thin film planar waveguide amplifier configuration.
Original language | English |
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Pages (from-to) | 796-799 |
Number of pages | 4 |
Journal | Optics Letters |
Volume | 40 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 Mar 2015 |