TY - JOUR
T1 - Interplay between the hot phonon effect and intervalley scattering on the cooling rate of hot carriers in GaAs and InP
AU - Clady, Raphael
AU - Tayebjee, Murad J. Y.
AU - Aliberti, Pasquale
AU - Koenig, Dirk
AU - Ekins-Daukes, Nicholas John
AU - Conibeer, Gavin J.
AU - Schmidt, Timothy W.
AU - Green, Martin A.
PY - 2012/1
Y1 - 2012/1
N2 - The influence of hot phonon effect and intervalley scattering on the hot carrier cooling rate was investigated using femtosecond time-resolved photoluminescence spectroscopy in bulk GaAs and InP, two electronically similar but vibrationally distinct semiconductors. In both materials, a broad photoluminescence signal that extends from the band gap energy to values larger than the pump pulse energy was observed during the first few picoseconds after photoexcitation, for different excitation energies (1.7, 1.88, and 2.4 eV) at high carrier densities (>1019 cm−3). Different hot carrier relaxation times were observed in GaAs and InP for different excitation energies, demonstrating the influence of intervalley scattering phenomena in GaAs. When electrons were not energetic enough to access satellite valleys, longer decay transients were observed for InP compared with GaAs. This provides experimental evidence of the hot phonon effect in InP. Temperature transients were calculated by analyzing the topography of the two-dimensional spectra.
AB - The influence of hot phonon effect and intervalley scattering on the hot carrier cooling rate was investigated using femtosecond time-resolved photoluminescence spectroscopy in bulk GaAs and InP, two electronically similar but vibrationally distinct semiconductors. In both materials, a broad photoluminescence signal that extends from the band gap energy to values larger than the pump pulse energy was observed during the first few picoseconds after photoexcitation, for different excitation energies (1.7, 1.88, and 2.4 eV) at high carrier densities (>1019 cm−3). Different hot carrier relaxation times were observed in GaAs and InP for different excitation energies, demonstrating the influence of intervalley scattering phenomena in GaAs. When electrons were not energetic enough to access satellite valleys, longer decay transients were observed for InP compared with GaAs. This provides experimental evidence of the hot phonon effect in InP. Temperature transients were calculated by analyzing the topography of the two-dimensional spectra.
KW - Electron-phonon interaction
KW - Hot carrier
KW - Hot phonon effect
KW - Intervalley scattering
KW - Time-resolved photoluminescence
UR - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=anu_research_portal_plus2&SrcAuth=WosAPI&KeyUT=WOS:000298596500010&DestLinkType=FullRecord&DestApp=WOS_CPL
U2 - 10.1002/pip.1121
DO - 10.1002/pip.1121
M3 - Article
SN - 1062-7995
VL - 20
SP - 82
EP - 92
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
IS - 1
ER -