Interplay between the hot phonon effect and intervalley scattering on the cooling rate of hot carriers in GaAs and InP

Raphael Clady; Murad J. Y. Tayebjee; Pasquale Aliberti; Dirk Koenig; Nicholas John Ekins-Daukes; Gavin J. Conibeer; Timothy W. Schmidt; Martin A. Green

doi:10.1002/pip.1121

Interplay between the hot phonon effect and intervalley scattering on the cooling rate of hot carriers in GaAs and InP

Raphael Clady
, Murad J. Y. Tayebjee
, Pasquale Aliberti
, Dirk Koenig
, Nicholas John Ekins-Daukes
, Gavin J. Conibeer
, Timothy W. Schmidt
, Martin A. Green

Research output: Contribution to journal › Article › peer-review

75 Citations (SciVal)

Abstract

The influence of hot phonon effect and intervalley scattering on the hot carrier cooling rate was investigated using femtosecond time-resolved photoluminescence spectroscopy in bulk GaAs and InP, two electronically similar but vibrationally distinct semiconductors. In both materials, a broad photoluminescence signal that extends from the band gap energy to values larger than the pump pulse energy was observed during the first few picoseconds after photoexcitation, for different excitation energies (1.7, 1.88, and 2.4 eV) at high carrier densities (>1019 cm−3). Different hot carrier relaxation times were observed in GaAs and InP for different excitation energies, demonstrating the influence of intervalley scattering phenomena in GaAs. When electrons were not energetic enough to access satellite valleys, longer decay transients were observed for InP compared with GaAs. This provides experimental evidence of the hot phonon effect in InP. Temperature transients were calculated by analyzing the topography of the two-dimensional spectra.

Original language	English
Pages (from-to)	82-92
Number of pages	11
Journal	Progress in Photovoltaics: Research and Applications
Volume	20
Issue number	1
Early online date	2 Jun 2011
DOIs	https://doi.org/10.1002/pip.1121
Publication status	Published - Jan 2012
Externally published	Yes

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title = "Interplay between the hot phonon effect and intervalley scattering on the cooling rate of hot carriers in GaAs and InP",

abstract = "The influence of hot phonon effect and intervalley scattering on the hot carrier cooling rate was investigated using femtosecond time-resolved photoluminescence spectroscopy in bulk GaAs and InP, two electronically similar but vibrationally distinct semiconductors. In both materials, a broad photoluminescence signal that extends from the band gap energy to values larger than the pump pulse energy was observed during the first few picoseconds after photoexcitation, for different excitation energies (1.7, 1.88, and 2.4 eV) at high carrier densities (>1019 cm−3). Different hot carrier relaxation times were observed in GaAs and InP for different excitation energies, demonstrating the influence of intervalley scattering phenomena in GaAs. When electrons were not energetic enough to access satellite valleys, longer decay transients were observed for InP compared with GaAs. This provides experimental evidence of the hot phonon effect in InP. Temperature transients were calculated by analyzing the topography of the two-dimensional spectra.",

keywords = "Electron-phonon interaction, Hot carrier, Hot phonon effect, Intervalley scattering, Time-resolved photoluminescence",

author = "Raphael Clady and Tayebjee, \{Murad J. Y.\} and Pasquale Aliberti and Dirk Koenig and Ekins-Daukes, \{Nicholas John\} and Conibeer, \{Gavin J.\} and Schmidt, \{Timothy W.\} and Green, \{Martin A.\}",

year = "2012",

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doi = "10.1002/pip.1121",

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AU - Clady, Raphael

AU - Tayebjee, Murad J. Y.

AU - Aliberti, Pasquale

AU - Koenig, Dirk

AU - Ekins-Daukes, Nicholas John

AU - Conibeer, Gavin J.

AU - Schmidt, Timothy W.

AU - Green, Martin A.

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N2 - The influence of hot phonon effect and intervalley scattering on the hot carrier cooling rate was investigated using femtosecond time-resolved photoluminescence spectroscopy in bulk GaAs and InP, two electronically similar but vibrationally distinct semiconductors. In both materials, a broad photoluminescence signal that extends from the band gap energy to values larger than the pump pulse energy was observed during the first few picoseconds after photoexcitation, for different excitation energies (1.7, 1.88, and 2.4 eV) at high carrier densities (>1019 cm−3). Different hot carrier relaxation times were observed in GaAs and InP for different excitation energies, demonstrating the influence of intervalley scattering phenomena in GaAs. When electrons were not energetic enough to access satellite valleys, longer decay transients were observed for InP compared with GaAs. This provides experimental evidence of the hot phonon effect in InP. Temperature transients were calculated by analyzing the topography of the two-dimensional spectra.

AB - The influence of hot phonon effect and intervalley scattering on the hot carrier cooling rate was investigated using femtosecond time-resolved photoluminescence spectroscopy in bulk GaAs and InP, two electronically similar but vibrationally distinct semiconductors. In both materials, a broad photoluminescence signal that extends from the band gap energy to values larger than the pump pulse energy was observed during the first few picoseconds after photoexcitation, for different excitation energies (1.7, 1.88, and 2.4 eV) at high carrier densities (>1019 cm−3). Different hot carrier relaxation times were observed in GaAs and InP for different excitation energies, demonstrating the influence of intervalley scattering phenomena in GaAs. When electrons were not energetic enough to access satellite valleys, longer decay transients were observed for InP compared with GaAs. This provides experimental evidence of the hot phonon effect in InP. Temperature transients were calculated by analyzing the topography of the two-dimensional spectra.

KW - Electron-phonon interaction

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KW - Hot phonon effect

KW - Intervalley scattering

KW - Time-resolved photoluminescence

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Interplay between the hot phonon effect and intervalley scattering on the cooling rate of hot carriers in GaAs and InP

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