Introduction of atomic H into Si3N4/SiO2/Si stacks

Hao Jin; K. J. Weber; Weitang Li; A. W. Blakers

doi:10.1016/S1001-0521(07)60063-1

Introduction of atomic H into Si₃N₄/SiO₂/Si stacks

Hao Jin^*, K. J. Weber, Weitang Li, A. W. Blakers

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Atomic H generated by a plasma NH₃ source at 400°C was demonstrated to passivate dehydroge-nated Si₃N₄/SiO₂/Si stacks effectively by bonding with defects in the Si₃N₄ film and at the Si-SiO₂ interface. A subsequent anneal in N₂ after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO₂ interface. Isothermal and isochronal anneals in N₂ were carried out in order to determine the optimized annealing conditions.

Original language	English
Pages (from-to)	150-152
Number of pages	3
Journal	Rare Metals
Volume	25
Issue number	6 SUPPL. 1
DOIs	https://doi.org/10.1016/S1001-0521(07)60063-1
Publication status	Published - Oct 2006

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title = "Introduction of atomic H into Si3N4/SiO2/Si stacks",

abstract = "Atomic H generated by a plasma NH3 source at 400°C was demonstrated to passivate dehydroge-nated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.",

keywords = "Anneal, LPCVD, Passivation, SiO",

author = "Hao Jin and Weber, {K. J.} and Weitang Li and Blakers, {A. W.}",

year = "2006",

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language = "English",

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T1 - Introduction of atomic H into Si3N4/SiO2/Si stacks

AU - Jin, Hao

AU - Weber, K. J.

AU - Li, Weitang

AU - Blakers, A. W.

PY - 2006/10

Y1 - 2006/10

N2 - Atomic H generated by a plasma NH3 source at 400°C was demonstrated to passivate dehydroge-nated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.

AB - Atomic H generated by a plasma NH3 source at 400°C was demonstrated to passivate dehydroge-nated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.

KW - Anneal

KW - LPCVD

KW - Passivation

KW - SiO

UR - http://www.scopus.com/inward/record.url?scp=33846834158&partnerID=8YFLogxK

U2 - 10.1016/S1001-0521(07)60063-1

DO - 10.1016/S1001-0521(07)60063-1

M3 - Article

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VL - 25

SP - 150

EP - 152

JO - Rare Metals

JF - Rare Metals

IS - 6 SUPPL. 1

ER -

Introduction of atomic H into Si₃N₄/SiO₂/Si stacks

Abstract

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