Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures

X. Q. Liu*, N. Li, Z. F. Li, W. Lu, S. C. Shen, Y. Fu, M. Willander, H. H. Tan, C. Jagadish, J. Zou

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    An Al0.5Ga0.5As/GaAs quantum wires infrared photo-detectors (QWRIP) based on V-grooved substrate is fabricated. The inter-hand transition in the quantum wires is characterized by spatially resolved micro-photoluminescence (micro-PL) measurement. The theoretical calculation of electronic structures is accomplished based on the Green function. The inter-subband transition is measured by photocurrent at 80 K, and the origin of the infrared response at 9 μm is from the inter-subband transition in quantum wire region, which is confirmed by the theoretical calculation results.

    Original languageEnglish
    Pages (from-to)5124-5127
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume39
    DOIs
    Publication statusPublished - Sept 2000

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