Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

J. Kret; J. Tournet; S. Parola; F. Martinez; D. Chemisana; R. Morin; M. de la Mata; N. Fernández-Delgado; A. A. Khan; S. I. Molina; Y. Rouillard; E. Tournié; Y. Cuminal

doi:10.1016/j.solmat.2020.110795

Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

J. Kret, J. Tournet, S. Parola^*, F. Martinez, D. Chemisana, R. Morin, M. de la Mata, N. Fernández-Delgado, A. A. Khan, S. I. Molina, Y. Rouillard, E. Tournié, Y. Cuminal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys, AlInAsSb exhibits the broadest range of direct bandgaps, making it a promising material for photovoltaic applications. In this work, the behavior of two AlInAsSb/GaSb tandem photovoltaic cells is studied. Material characterization and physics-based 1D modeling are carried out to analyze and discuss performance of the cells. An efficiency of 5.2% is achieved under 1-sun illumination, limited by the AlInAsSb quaternary-alloy properties.

Original language	English
Article number	110795
Journal	Solar Energy Materials and Solar Cells
Volume	219
DOIs	https://doi.org/10.1016/j.solmat.2020.110795
Publication status	Published - Jan 2021
Externally published	Yes

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Kret, J., Tournet, J., Parola, S., Martinez, F., Chemisana, D., Morin, R., Mata, M. D. L., Fernández-Delgado, N., Khan, A. A., Molina, S. I., Rouillard, Y., Tournié, E., & Cuminal, Y. (2021). Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells. Solar Energy Materials and Solar Cells, 219, Article 110795. https://doi.org/10.1016/j.solmat.2020.110795

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title = "Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells",

abstract = "III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys, AlInAsSb exhibits the broadest range of direct bandgaps, making it a promising material for photovoltaic applications. In this work, the behavior of two AlInAsSb/GaSb tandem photovoltaic cells is studied. Material characterization and physics-based 1D modeling are carried out to analyze and discuss performance of the cells. An efficiency of 5.2% is achieved under 1-sun illumination, limited by the AlInAsSb quaternary-alloy properties.",

keywords = "AlInAsSb, GaSb, III-Sb alloys, III-V multi-junction solar cells, Tandem cells",

author = "J. Kret and J. Tournet and S. Parola and F. Martinez and D. Chemisana and R. Morin and Mata, {M. de la} and N. Fern{\'a}ndez-Delgado and Khan, {A. A.} and Molina, {S. I.} and Y. Rouillard and E. Tourni{\'e} and Y. Cuminal",

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year = "2021",

month = jan,

doi = "10.1016/j.solmat.2020.110795",

language = "English",

volume = "219",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

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Kret, J, Tournet, J, Parola, S, Martinez, F, Chemisana, D, Morin, R, Mata, MDL, Fernández-Delgado, N, Khan, AA, Molina, SI, Rouillard, Y, Tournié, E & Cuminal, Y 2021, 'Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells', Solar Energy Materials and Solar Cells, vol. 219, 110795. https://doi.org/10.1016/j.solmat.2020.110795

TY - JOUR

T1 - Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

AU - Kret, J.

AU - Tournet, J.

AU - Parola, S.

AU - Martinez, F.

AU - Chemisana, D.

AU - Morin, R.

AU - Mata, M. de la

AU - Fernández-Delgado, N.

AU - Khan, A. A.

AU - Molina, S. I.

AU - Rouillard, Y.

AU - Tournié, E.

AU - Cuminal, Y.

PY - 2021/1

Y1 - 2021/1

N2 - III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys, AlInAsSb exhibits the broadest range of direct bandgaps, making it a promising material for photovoltaic applications. In this work, the behavior of two AlInAsSb/GaSb tandem photovoltaic cells is studied. Material characterization and physics-based 1D modeling are carried out to analyze and discuss performance of the cells. An efficiency of 5.2% is achieved under 1-sun illumination, limited by the AlInAsSb quaternary-alloy properties.

AB - III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys, AlInAsSb exhibits the broadest range of direct bandgaps, making it a promising material for photovoltaic applications. In this work, the behavior of two AlInAsSb/GaSb tandem photovoltaic cells is studied. Material characterization and physics-based 1D modeling are carried out to analyze and discuss performance of the cells. An efficiency of 5.2% is achieved under 1-sun illumination, limited by the AlInAsSb quaternary-alloy properties.

KW - AlInAsSb

KW - GaSb

KW - III-Sb alloys

KW - III-V multi-junction solar cells

KW - Tandem cells

UR - http://www.scopus.com/inward/record.url?scp=85091647951&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2020.110795

DO - 10.1016/j.solmat.2020.110795

M3 - Article

SN - 0927-0248

VL - 219

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

M1 - 110795

ER -

Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

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