Investigation of interface properties in oxide passivated boron diffused silicon

Natalita M. Nursam; Klaus J. Weber; Hao Jin; Yongling Ren; Paul Smith

doi:10.1016/j.cap.2010.02.053

Investigation of interface properties in oxide passivated boron diffused silicon

Natalita M. Nursam, Klaus J. Weber, Hao Jin, Yongling Ren, Paul Smith

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3 Citations (Scopus)

Abstract

Electron paramagnetic resonance (EPR) measurements were employed to observe the dominant defect at the thermally grown (1 1 1) Si-SiO₂ interface, namely the P_b center, of samples with oxides grown at moderate temperatures. The presence of boron diffusion leads to an increase of the P_b density by a factor of ∼1.6 to 1.8, significantly less than previously reported for higher temperature oxides. The P_b density for samples with similar emitter sheet resistances but different (by a factor of 4) boron surface concentrations were similar, suggesting that the increase in P_b concentration following is primarily determined by the total boron dose. Investigations of the stability of the passivation of boron diffused, oxide passivation emitters strongly suggest that degradation is the result of the permeability of SiO₂ to moisture, which can be prevented through the addition of a moisture barrier.

Original language	English
Pages (from-to)	S361-S364
Journal	Current Applied Physics
Volume	10
Issue number	SUPPL. 3
DOIs	https://doi.org/10.1016/j.cap.2010.02.053
Publication status	Published - 2010

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title = "Investigation of interface properties in oxide passivated boron diffused silicon",

abstract = "Electron paramagnetic resonance (EPR) measurements were employed to observe the dominant defect at the thermally grown (1 1 1) Si-SiO2 interface, namely the Pb center, of samples with oxides grown at moderate temperatures. The presence of boron diffusion leads to an increase of the Pb density by a factor of ∼1.6 to 1.8, significantly less than previously reported for higher temperature oxides. The Pb density for samples with similar emitter sheet resistances but different (by a factor of 4) boron surface concentrations were similar, suggesting that the increase in Pb concentration following is primarily determined by the total boron dose. Investigations of the stability of the passivation of boron diffused, oxide passivation emitters strongly suggest that degradation is the result of the permeability of SiO2 to moisture, which can be prevented through the addition of a moisture barrier.",

keywords = "Boron emitter, Degradation, Electron paramagnetic resonance, Si-SiO interface",

author = "Nursam, {Natalita M.} and Weber, {Klaus J.} and Hao Jin and Yongling Ren and Paul Smith",

year = "2010",

doi = "10.1016/j.cap.2010.02.053",

language = "English",

volume = "10",

pages = "S361--S364",

journal = "Current Applied Physics",

issn = "1567-1739",

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TY - JOUR

T1 - Investigation of interface properties in oxide passivated boron diffused silicon

AU - Nursam, Natalita M.

AU - Weber, Klaus J.

AU - Jin, Hao

AU - Ren, Yongling

AU - Smith, Paul

PY - 2010

Y1 - 2010

N2 - Electron paramagnetic resonance (EPR) measurements were employed to observe the dominant defect at the thermally grown (1 1 1) Si-SiO2 interface, namely the Pb center, of samples with oxides grown at moderate temperatures. The presence of boron diffusion leads to an increase of the Pb density by a factor of ∼1.6 to 1.8, significantly less than previously reported for higher temperature oxides. The Pb density for samples with similar emitter sheet resistances but different (by a factor of 4) boron surface concentrations were similar, suggesting that the increase in Pb concentration following is primarily determined by the total boron dose. Investigations of the stability of the passivation of boron diffused, oxide passivation emitters strongly suggest that degradation is the result of the permeability of SiO2 to moisture, which can be prevented through the addition of a moisture barrier.

AB - Electron paramagnetic resonance (EPR) measurements were employed to observe the dominant defect at the thermally grown (1 1 1) Si-SiO2 interface, namely the Pb center, of samples with oxides grown at moderate temperatures. The presence of boron diffusion leads to an increase of the Pb density by a factor of ∼1.6 to 1.8, significantly less than previously reported for higher temperature oxides. The Pb density for samples with similar emitter sheet resistances but different (by a factor of 4) boron surface concentrations were similar, suggesting that the increase in Pb concentration following is primarily determined by the total boron dose. Investigations of the stability of the passivation of boron diffused, oxide passivation emitters strongly suggest that degradation is the result of the permeability of SiO2 to moisture, which can be prevented through the addition of a moisture barrier.

KW - Boron emitter

KW - Degradation

KW - Electron paramagnetic resonance

KW - Si-SiO interface

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U2 - 10.1016/j.cap.2010.02.053

DO - 10.1016/j.cap.2010.02.053

M3 - Article

SN - 1567-1739

VL - 10

SP - S361-S364

JO - Current Applied Physics

JF - Current Applied Physics

IS - SUPPL. 3

ER -

Investigation of interface properties in oxide passivated boron diffused silicon

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