Investigation of ion implantation induced intermixing in InP based quaternary quantum wells

S. C. Du; L. Fu; H. H. Tan; C. Jagadish

doi:10.1088/0022-3727/44/47/475105

Investigation of ion implantation induced intermixing in InP based quaternary quantum wells

S. C. Du^*, L. Fu, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this work, proton and arsenic ion implantation induced intermixing in AlInGaAs/InGaAs quantum wells (QWs) has been studied and compared with InGaAsP/InGaAs QWs. The different interdiffusion results obtained from the two QW structures are compared and discussed based on thermal annealing studies, different implantation ion species, dynamic annealing effects of barrier layers, as well as interdiffusion mechanisms.

Original language	English
Article number	475105
Journal	Journal Physics D: Applied Physics
Volume	44
Issue number	47
DOIs	https://doi.org/10.1088/0022-3727/44/47/475105
Publication status	Published - 30 Nov 2011

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10.1088/0022-3727/44/47/475105

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title = "Investigation of ion implantation induced intermixing in InP based quaternary quantum wells",

abstract = "In this work, proton and arsenic ion implantation induced intermixing in AlInGaAs/InGaAs quantum wells (QWs) has been studied and compared with InGaAsP/InGaAs QWs. The different interdiffusion results obtained from the two QW structures are compared and discussed based on thermal annealing studies, different implantation ion species, dynamic annealing effects of barrier layers, as well as interdiffusion mechanisms.",

author = "Du, {S. C.} and L. Fu and Tan, {H. H.} and C. Jagadish",

year = "2011",

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AU - Du, S. C.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2011/11/30

Y1 - 2011/11/30

N2 - In this work, proton and arsenic ion implantation induced intermixing in AlInGaAs/InGaAs quantum wells (QWs) has been studied and compared with InGaAsP/InGaAs QWs. The different interdiffusion results obtained from the two QW structures are compared and discussed based on thermal annealing studies, different implantation ion species, dynamic annealing effects of barrier layers, as well as interdiffusion mechanisms.

AB - In this work, proton and arsenic ion implantation induced intermixing in AlInGaAs/InGaAs quantum wells (QWs) has been studied and compared with InGaAsP/InGaAs QWs. The different interdiffusion results obtained from the two QW structures are compared and discussed based on thermal annealing studies, different implantation ion species, dynamic annealing effects of barrier layers, as well as interdiffusion mechanisms.

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U2 - 10.1088/0022-3727/44/47/475105

DO - 10.1088/0022-3727/44/47/475105

M3 - Article

SN - 0022-3727

VL - 44

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

IS - 47

M1 - 475105

ER -

Investigation of ion implantation induced intermixing in InP based quaternary quantum wells

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