Investigation of lifetime degradation of RIE-processed silicon samples for solar cells

Ngwe Soe Zin; Andrew Blakers; Klaus Weber; Chun Zhang

doi:10.1109/PVSC.2009.5411762

Investigation of lifetime degradation of RIE-processed silicon samples for solar cells

Ngwe Soe Zin, Andrew Blakers, Klaus Weber, Chun Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

3 Citations (Scopus)

Abstract

Reactive Ion Etching (RIE) is observed to cause substantial effective carrier lifetime degradation in silicon wafers. Degradation of lifetime is permanent for samples where RIE etches into silicon, while the lifetime degradation is temporary for samples where RIE etches only dielectric layers of SiO₂ grown on the wafer. The degradation of the effective lifetime of RIE-etched silicon samples can be minimized by exposing only a few percent of the wafer to the etch.

Original language	English
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	39-43
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2009.5411762
Publication status	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia USA, Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	7/06/09 → 12/06/09
Other	June 7-12 2009

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10.1109/PVSC.2009.5411762

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title = "Investigation of lifetime degradation of RIE-processed silicon samples for solar cells",

abstract = "Reactive Ion Etching (RIE) is observed to cause substantial effective carrier lifetime degradation in silicon wafers. Degradation of lifetime is permanent for samples where RIE etches into silicon, while the lifetime degradation is temporary for samples where RIE etches only dielectric layers of SiO2 grown on the wafer. The degradation of the effective lifetime of RIE-etched silicon samples can be minimized by exposing only a few percent of the wafer to the etch.",

author = "Zin, {Ngwe Soe} and Andrew Blakers and Klaus Weber and Chun Zhang",

year = "2009",

doi = "10.1109/PVSC.2009.5411762",

language = "English",

isbn = "9781424429509",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "39--43",

booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Zin, NS, Blakers, A , Weber, K & Zhang, C 2009, Investigation of lifetime degradation of RIE-processed silicon samples for solar cells. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411762, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 39-43, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 7/06/09. https://doi.org/10.1109/PVSC.2009.5411762

Investigation of lifetime degradation of RIE-processed silicon samples for solar cells. / Zin, Ngwe Soe; Blakers, Andrew ; Weber, Klaus et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 39-43 5411762 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

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AU - Blakers, Andrew

AU - Weber, Klaus

AU - Zhang, Chun

PY - 2009

Y1 - 2009

N2 - Reactive Ion Etching (RIE) is observed to cause substantial effective carrier lifetime degradation in silicon wafers. Degradation of lifetime is permanent for samples where RIE etches into silicon, while the lifetime degradation is temporary for samples where RIE etches only dielectric layers of SiO2 grown on the wafer. The degradation of the effective lifetime of RIE-etched silicon samples can be minimized by exposing only a few percent of the wafer to the etch.

AB - Reactive Ion Etching (RIE) is observed to cause substantial effective carrier lifetime degradation in silicon wafers. Degradation of lifetime is permanent for samples where RIE etches into silicon, while the lifetime degradation is temporary for samples where RIE etches only dielectric layers of SiO2 grown on the wafer. The degradation of the effective lifetime of RIE-etched silicon samples can be minimized by exposing only a few percent of the wafer to the etch.

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BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

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Y2 - 7 June 2009 through 12 June 2009

ER -

Investigation of lifetime degradation of RIE-processed silicon samples for solar cells

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