Investigation of temperature dependence of photoluminescence in Re xY2-xSiO5

Y. Liu; C. N. Xu; H. Chen; K. Nonaka

doi:10.1016/S0925-3467(03)00252-0

Investigation of temperature dependence of photoluminescence in Re _xY_2-xSiO₅

Y. Liu, C. N. Xu^*, H. Chen, K. Nonaka

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The photoluminescent properties of Re_xY_2-xSiO ₅ (Re = Eu³⁺, Ce³⁺, Sm³⁺, Tb ³⁺ and Tm³⁺) and some of their combinations were systematically studied from room temperature to 573 K. It was found that the temperature dependence of the photoluminescence in the singly doped Y ₂SiO₅ (YSO) strongly depended on the activator itself and the interaction between the activator and the host. The thermal quenching in the doubly doped YSO was related to the trap type of doping ions. This study shows a direct relationship between the thermal quenching and the microstructure, which is very useful in the design and development of photoluminescent materials used at elevated temperature.

Original language	English
Pages (from-to)	243-250
Number of pages	8
Journal	Optical Materials
Volume	25
Issue number	3
DOIs	https://doi.org/10.1016/S0925-3467(03)00252-0
Publication status	Published - Apr 2004
Externally published	Yes

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title = "Investigation of temperature dependence of photoluminescence in Re xY2-xSiO5",

abstract = "The photoluminescent properties of RexY2-xSiO 5 (Re = Eu3+, Ce3+, Sm3+, Tb 3+ and Tm3+) and some of their combinations were systematically studied from room temperature to 573 K. It was found that the temperature dependence of the photoluminescence in the singly doped Y 2SiO5 (YSO) strongly depended on the activator itself and the interaction between the activator and the host. The thermal quenching in the doubly doped YSO was related to the trap type of doping ions. This study shows a direct relationship between the thermal quenching and the microstructure, which is very useful in the design and development of photoluminescent materials used at elevated temperature.",

keywords = "Photoluminescence, Rare-earth ion, Thermal quenching, YSiO",

author = "Y. Liu and Xu, {C. N.} and H. Chen and K. Nonaka",

year = "2004",

month = apr,

doi = "10.1016/S0925-3467(03)00252-0",

language = "English",

volume = "25",

pages = "243--250",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

number = "3",

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TY - JOUR

T1 - Investigation of temperature dependence of photoluminescence in Re xY2-xSiO5

AU - Liu, Y.

AU - Xu, C. N.

AU - Chen, H.

AU - Nonaka, K.

PY - 2004/4

Y1 - 2004/4

N2 - The photoluminescent properties of RexY2-xSiO 5 (Re = Eu3+, Ce3+, Sm3+, Tb 3+ and Tm3+) and some of their combinations were systematically studied from room temperature to 573 K. It was found that the temperature dependence of the photoluminescence in the singly doped Y 2SiO5 (YSO) strongly depended on the activator itself and the interaction between the activator and the host. The thermal quenching in the doubly doped YSO was related to the trap type of doping ions. This study shows a direct relationship between the thermal quenching and the microstructure, which is very useful in the design and development of photoluminescent materials used at elevated temperature.

AB - The photoluminescent properties of RexY2-xSiO 5 (Re = Eu3+, Ce3+, Sm3+, Tb 3+ and Tm3+) and some of their combinations were systematically studied from room temperature to 573 K. It was found that the temperature dependence of the photoluminescence in the singly doped Y 2SiO5 (YSO) strongly depended on the activator itself and the interaction between the activator and the host. The thermal quenching in the doubly doped YSO was related to the trap type of doping ions. This study shows a direct relationship between the thermal quenching and the microstructure, which is very useful in the design and development of photoluminescent materials used at elevated temperature.

KW - Photoluminescence

KW - Rare-earth ion

KW - Thermal quenching

KW - YSiO

UR - http://www.scopus.com/inward/record.url?scp=1242277801&partnerID=8YFLogxK

U2 - 10.1016/S0925-3467(03)00252-0

DO - 10.1016/S0925-3467(03)00252-0

M3 - Article

SN - 0925-3467

VL - 25

SP - 243

EP - 250

JO - Optical Materials

JF - Optical Materials

IS - 3

ER -

Investigation of temperature dependence of photoluminescence in Re _xY_2-xSiO₅

Abstract

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