Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells

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    Abstract

    In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. Photoluminescence spectroscopy was used for monitoring the changes in the optical properties of the quantum wells due to interdiffusion. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the QW structure and dielectric capping layer. The results are compared and discussed based on the sublattices' interdiffusion, promotion or suppression under different dielectric capping layers.

    Original languageEnglish
    Article number055014
    JournalSemiconductor Science and Technology
    Volume25
    Issue number5
    DOIs
    Publication statusPublished - 2010

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