Abstract
In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. Photoluminescence spectroscopy was used for monitoring the changes in the optical properties of the quantum wells due to interdiffusion. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the QW structure and dielectric capping layer. The results are compared and discussed based on the sublattices' interdiffusion, promotion or suppression under different dielectric capping layers.
Original language | English |
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Article number | 055014 |
Journal | Semiconductor Science and Technology |
Volume | 25 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2010 |