Ion beam damage in epitaxially grown MCT on GaAs

S. P. Russo; P. N. Johnston; R. G. Elliman; S. P. Dooley; D. N. Jamieson; G. N. Pain

doi:10.1016/0168-583X(92)95475-7

Ion beam damage in epitaxially grown MCT on GaAs

S. P. Russo^*, P. N. Johnston, R. G. Elliman, S. P. Dooley, D. N. Jamieson, G. N. Pain

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Ion beam analysis has been used to investigate the epitaxial quality and compositional and thickness uniformity of epitaxial Hg_{1 - x}Cd_xTe (MCT) layers on GaAs substrates grown by low temperature MOCVD. To determine the effect of the ion beam on the MCT layer during a typical measurement, damage studies have been performed by channeling analysis using a nuclear microprobe. Microprobe channeling enabled high flux damage to be investigated. Areas of crystal ranging from approximately 30 × 30 μm² to 260 × 260 μm² were scanned using both 2.0 MeV H⁺ and He⁺ ions and the χ_min measured as a function of ion beam dose. Macrobeam channeling was also performed with an unscanned beam of 1 mm spot size. The results indicate the acceptable range of dose for ion beam analysis.

Original language	English
Pages (from-to)	251-255
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	64
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(92)95475-7
Publication status	Published - 2 Feb 1992
Externally published	Yes

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@article{ae914132ffd14918973515365754452d,

title = "Ion beam damage in epitaxially grown MCT on GaAs",

abstract = "Ion beam analysis has been used to investigate the epitaxial quality and compositional and thickness uniformity of epitaxial Hg1 - xCdxTe (MCT) layers on GaAs substrates grown by low temperature MOCVD. To determine the effect of the ion beam on the MCT layer during a typical measurement, damage studies have been performed by channeling analysis using a nuclear microprobe. Microprobe channeling enabled high flux damage to be investigated. Areas of crystal ranging from approximately 30 × 30 μm2 to 260 × 260 μm2 were scanned using both 2.0 MeV H+ and He+ ions and the χmin measured as a function of ion beam dose. Macrobeam channeling was also performed with an unscanned beam of 1 mm spot size. The results indicate the acceptable range of dose for ion beam analysis.",

author = "Russo, \{S. P.\} and Johnston, \{P. N.\} and Elliman, \{R. G.\} and Dooley, \{S. P.\} and Jamieson, \{D. N.\} and Pain, \{G. N.\}",

year = "1992",

month = feb,

day = "2",

doi = "10.1016/0168-583X(92)95475-7",

language = "English",

volume = "64",

pages = "251--255",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Ion beam damage in epitaxially grown MCT on GaAs

AU - Russo, S. P.

AU - Johnston, P. N.

AU - Elliman, R. G.

AU - Dooley, S. P.

AU - Jamieson, D. N.

AU - Pain, G. N.

PY - 1992/2/2

Y1 - 1992/2/2

N2 - Ion beam analysis has been used to investigate the epitaxial quality and compositional and thickness uniformity of epitaxial Hg1 - xCdxTe (MCT) layers on GaAs substrates grown by low temperature MOCVD. To determine the effect of the ion beam on the MCT layer during a typical measurement, damage studies have been performed by channeling analysis using a nuclear microprobe. Microprobe channeling enabled high flux damage to be investigated. Areas of crystal ranging from approximately 30 × 30 μm2 to 260 × 260 μm2 were scanned using both 2.0 MeV H+ and He+ ions and the χmin measured as a function of ion beam dose. Macrobeam channeling was also performed with an unscanned beam of 1 mm spot size. The results indicate the acceptable range of dose for ion beam analysis.

AB - Ion beam analysis has been used to investigate the epitaxial quality and compositional and thickness uniformity of epitaxial Hg1 - xCdxTe (MCT) layers on GaAs substrates grown by low temperature MOCVD. To determine the effect of the ion beam on the MCT layer during a typical measurement, damage studies have been performed by channeling analysis using a nuclear microprobe. Microprobe channeling enabled high flux damage to be investigated. Areas of crystal ranging from approximately 30 × 30 μm2 to 260 × 260 μm2 were scanned using both 2.0 MeV H+ and He+ ions and the χmin measured as a function of ion beam dose. Macrobeam channeling was also performed with an unscanned beam of 1 mm spot size. The results indicate the acceptable range of dose for ion beam analysis.

UR - https://www.scopus.com/pages/publications/30244439828

U2 - 10.1016/0168-583X(92)95475-7

DO - 10.1016/0168-583X(92)95475-7

M3 - Article

AN - SCOPUS:30244439828

SN - 0168-583X

VL - 64

SP - 251

EP - 255

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Ion beam damage in epitaxially grown MCT on GaAs

Abstract

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