Ion Beam Damage Processes in GaN

Sergei Kucheyev; Jim Williams; Jin Zou; Chennupati Jagadish; Jodie Bradby; Gang Li

Ion Beam Damage Processes in GaN

Sergei Kucheyev, Jim Williams, Jin Zou, Chennupati Jagadish, Jodie Bradby, Gang Li

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Wurtzite GaN films exposed to ion bombardment have been studied by a combination of Rutherford backscattering/channeling (RBS/ C) spectrometry, transmission electron microscopy ( TEM) , atomic force microscopy (AFM) , and nanoindentation. Compared with other compound semiconductors such as GaAs and InP, GaN exhibits some extreme behavior and property changes under ion irradiation. In this paper, we briefly review the following aspects of ion beam damage processes in GaN: (i ) the damage build- up behavior,
(ii ) strong dynamic annealing and its consequences, ( iii ) defect types,
(iv) amorphization , ( v) preferential loss of nitrogen , (vi ) ion- beam-induced porosity and material dissociation , (vii ) anomalous surface erosion during ion bombardment at elevated temperatures, (viii ) the effect of implantation disorder on mechanical properties, ( ix) problems with annealing of amorphous GaN, and (x) ion- beam-induced reconstruction of amorphous GaN. Emphasis is given to current problems which may hinder a successful application of ion implantation in the fabrication of GaN- based devices.

Original language	English
Title of host publication	III-NITRIDE BASED SEMICONDUCTOR ELECTRONICS AND OPTICAL DEVICES and THIRTY-FOURTH STATE- OF-THE-ART- PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXIV) Proceedings of the International Symposia
Editors	F. Ren, D. N. Buckley, S. N. G. Chu, S. J. Pearton
Publisher	Electrochemical Society, Inc.
Pages	150-160
Number of pages	11
Volume	2001-1
ISBN (Electronic)	1-56677-307-5
ISBN (Print)	1-56677-307-5
Publication status	Published - 2001
Event	199th Electrochemical Society (ECS) Meeting: III-Nitride-Based Semiconductor Electrode and Optical Devices and State-of-the-Art Program on Compound Semiconductors XXXIV - Renaissance Washington DC Hotel, Washington DC, United States Duration: 25 Mar 2001 → 30 Mar 2001 https://www.electrochem.org/199#:~:text=199th%20ECS%20Meeting.%20Washington,%20D.C.,%20March%2025-30,%202001,%20Renaissance%20Washington

Publication series

Name	Electrochemical Society Proceedings Volume 2001-1
Publisher	IOP Science
ISSN (Print)	2576-1579

Conference

Conference	199th Electrochemical Society (ECS) Meeting
Country/Territory	United States
City	Washington DC
Period	25/03/01 → 30/03/01
Internet address	https://www.electrochem.org/199#:~:text=199th%20ECS%20Meeting.%20Washington,%20D.C.,%20March%2025-30,%202001,%20Renaissance%20Washington

Cite this

Kucheyev, S., Williams, J., Zou, J., Jagadish, C., Bradby, J., & Li, G. (2001). Ion Beam Damage Processes in GaN. In F. Ren, D. N. Buckley, S. N. G. Chu, & S. J. Pearton (Eds.), III-NITRIDE BASED SEMICONDUCTOR ELECTRONICS AND OPTICAL DEVICES and THIRTY-FOURTH STATE- OF-THE-ART- PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXIV) Proceedings of the International Symposia (Vol. 2001-1, pp. 150-160). (Electrochemical Society Proceedings Volume 2001-1). Electrochemical Society, Inc..

Kucheyev, Sergei ; Williams, Jim ; Zou, Jin et al. / Ion Beam Damage Processes in GaN. III-NITRIDE BASED SEMICONDUCTOR ELECTRONICS AND OPTICAL DEVICES and THIRTY-FOURTH STATE- OF-THE-ART- PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXIV) Proceedings of the International Symposia. editor / F. Ren ; D. N. Buckley ; S. N. G. Chu ; S. J. Pearton. Vol. 2001-1 Electrochemical Society, Inc., 2001. pp. 150-160 (Electrochemical Society Proceedings Volume 2001-1).

@inproceedings{15db5b43838c4557931c1b05dca7069c,

title = "Ion Beam Damage Processes in GaN",

abstract = "Wurtzite GaN films exposed to ion bombardment have been studied by a combination of Rutherford backscattering/channeling (RBS/ C) spectrometry, transmission electron microscopy ( TEM) , atomic force microscopy (AFM) , and nanoindentation. Compared with other compound semiconductors such as GaAs and InP, GaN exhibits some extreme behavior and property changes under ion irradiation. In this paper, we briefly review the following aspects of ion beam damage processes in GaN: (i ) the damage build- up behavior,(ii ) strong dynamic annealing and its consequences, ( iii ) defect types,(iv) amorphization , ( v) preferential loss of nitrogen , (vi ) ion- beam-induced porosity and material dissociation , (vii ) anomalous surface erosion during ion bombardment at elevated temperatures, (viii ) the effect of implantation disorder on mechanical properties, ( ix) problems with annealing of amorphous GaN, and (x) ion- beam-induced reconstruction of amorphous GaN. Emphasis is given to current problems which may hinder a successful application of ion implantation in the fabrication of GaN- based devices.",

author = "Sergei Kucheyev and Jim Williams and Jin Zou and Chennupati Jagadish and Jodie Bradby and Gang Li",

year = "2001",

language = "English",

isbn = " 1-56677-307-5",

volume = "2001-1",

series = "Electrochemical Society Proceedings Volume 2001-1",

publisher = "Electrochemical Society, Inc.",

pages = "150--160",

editor = "F. Ren and Buckley, {D. N.} and Chu, {S. N. G.} and Pearton, {S. J.}",

booktitle = "III-NITRIDE BASED SEMICONDUCTOR ELECTRONICS AND OPTICAL DEVICES and THIRTY-FOURTH STATE- OF-THE-ART- PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXIV) Proceedings of the International Symposia",

note = "199th Electrochemical Society (ECS) Meeting : III-Nitride-Based Semiconductor Electrode and Optical Devices and State-of-the-Art Program on Compound Semiconductors XXXIV ; Conference date: 25-03-2001 Through 30-03-2001",

url = "https://www.electrochem.org/199#:~:text=199th%20ECS%20Meeting.%20Washington,%20D.C.,%20March%2025-30,%202001,%20Renaissance%20Washington",

}

Kucheyev, S, Williams, J, Zou, J, Jagadish, C , Bradby, J & Li, G 2001, Ion Beam Damage Processes in GaN. in F Ren, DN Buckley, SNG Chu & SJ Pearton (eds), III-NITRIDE BASED SEMICONDUCTOR ELECTRONICS AND OPTICAL DEVICES and THIRTY-FOURTH STATE- OF-THE-ART- PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXIV) Proceedings of the International Symposia. vol. 2001-1, Electrochemical Society Proceedings Volume 2001-1, Electrochemical Society, Inc., pp. 150-160, 199th Electrochemical Society (ECS) Meeting, Washington DC, District of Columbia, United States, 25/03/01.

Ion Beam Damage Processes in GaN. / Kucheyev, Sergei; Williams, Jim; Zou, Jin et al.
III-NITRIDE BASED SEMICONDUCTOR ELECTRONICS AND OPTICAL DEVICES and THIRTY-FOURTH STATE- OF-THE-ART- PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXIV) Proceedings of the International Symposia. ed. / F. Ren; D. N. Buckley; S. N. G. Chu; S. J. Pearton. Vol. 2001-1 Electrochemical Society, Inc., 2001. p. 150-160 (Electrochemical Society Proceedings Volume 2001-1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ion Beam Damage Processes in GaN

AU - Kucheyev, Sergei

AU - Williams, Jim

AU - Zou, Jin

AU - Jagadish, Chennupati

AU - Bradby, Jodie

AU - Li, Gang

PY - 2001

Y1 - 2001

N2 - Wurtzite GaN films exposed to ion bombardment have been studied by a combination of Rutherford backscattering/channeling (RBS/ C) spectrometry, transmission electron microscopy ( TEM) , atomic force microscopy (AFM) , and nanoindentation. Compared with other compound semiconductors such as GaAs and InP, GaN exhibits some extreme behavior and property changes under ion irradiation. In this paper, we briefly review the following aspects of ion beam damage processes in GaN: (i ) the damage build- up behavior,(ii ) strong dynamic annealing and its consequences, ( iii ) defect types,(iv) amorphization , ( v) preferential loss of nitrogen , (vi ) ion- beam-induced porosity and material dissociation , (vii ) anomalous surface erosion during ion bombardment at elevated temperatures, (viii ) the effect of implantation disorder on mechanical properties, ( ix) problems with annealing of amorphous GaN, and (x) ion- beam-induced reconstruction of amorphous GaN. Emphasis is given to current problems which may hinder a successful application of ion implantation in the fabrication of GaN- based devices.

AB - Wurtzite GaN films exposed to ion bombardment have been studied by a combination of Rutherford backscattering/channeling (RBS/ C) spectrometry, transmission electron microscopy ( TEM) , atomic force microscopy (AFM) , and nanoindentation. Compared with other compound semiconductors such as GaAs and InP, GaN exhibits some extreme behavior and property changes under ion irradiation. In this paper, we briefly review the following aspects of ion beam damage processes in GaN: (i ) the damage build- up behavior,(ii ) strong dynamic annealing and its consequences, ( iii ) defect types,(iv) amorphization , ( v) preferential loss of nitrogen , (vi ) ion- beam-induced porosity and material dissociation , (vii ) anomalous surface erosion during ion bombardment at elevated temperatures, (viii ) the effect of implantation disorder on mechanical properties, ( ix) problems with annealing of amorphous GaN, and (x) ion- beam-induced reconstruction of amorphous GaN. Emphasis is given to current problems which may hinder a successful application of ion implantation in the fabrication of GaN- based devices.

UR - https://books.google.com.au/books?id=uGjXd8jd2-8C&printsec=frontcover&redir_esc=y#v=onepage&q&f=fals

M3 - Conference contribution

SN - 1-56677-307-5

VL - 2001-1

T3 - Electrochemical Society Proceedings Volume 2001-1

SP - 150

EP - 160

BT - III-NITRIDE BASED SEMICONDUCTOR ELECTRONICS AND OPTICAL DEVICES and THIRTY-FOURTH STATE- OF-THE-ART- PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXIV) Proceedings of the International Symposia

A2 - Ren, F.

A2 - Buckley, D. N.

A2 - Chu, S. N. G.

A2 - Pearton, S. J.

PB - Electrochemical Society, Inc.

T2 - 199th Electrochemical Society (ECS) Meeting

Y2 - 25 March 2001 through 30 March 2001

ER -

Kucheyev S, Williams J, Zou J, Jagadish C , Bradby J, Li G. Ion Beam Damage Processes in GaN. In Ren F, Buckley DN, Chu SNG, Pearton SJ, editors, III-NITRIDE BASED SEMICONDUCTOR ELECTRONICS AND OPTICAL DEVICES and THIRTY-FOURTH STATE- OF-THE-ART- PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXIV) Proceedings of the International Symposia. Vol. 2001-1. Electrochemical Society, Inc. 2001. p. 150-160. (Electrochemical Society Proceedings Volume 2001-1).

Ion Beam Damage Processes in GaN

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