Abstract
Wurtzite GaN films exposed to ion bombardment have been studied by a combination of Rutherford backscattering/channeling (RBS/ C) spectrometry, transmission electron microscopy ( TEM) , atomic force microscopy (AFM) , and nanoindentation. Compared with other compound semiconductors such as GaAs and InP, GaN exhibits some extreme behavior and property changes under ion irradiation. In this paper, we briefly review the following aspects of ion beam damage processes in GaN: (i ) the damage build- up behavior,
(ii ) strong dynamic annealing and its consequences, ( iii ) defect types,
(iv) amorphization , ( v) preferential loss of nitrogen , (vi ) ion- beam-induced porosity and material dissociation , (vii ) anomalous surface erosion during ion bombardment at elevated temperatures, (viii ) the effect of implantation disorder on mechanical properties, ( ix) problems with annealing of amorphous GaN, and (x) ion- beam-induced reconstruction of amorphous GaN. Emphasis is given to current problems which may hinder a successful application of ion implantation in the fabrication of GaN- based devices.
(ii ) strong dynamic annealing and its consequences, ( iii ) defect types,
(iv) amorphization , ( v) preferential loss of nitrogen , (vi ) ion- beam-induced porosity and material dissociation , (vii ) anomalous surface erosion during ion bombardment at elevated temperatures, (viii ) the effect of implantation disorder on mechanical properties, ( ix) problems with annealing of amorphous GaN, and (x) ion- beam-induced reconstruction of amorphous GaN. Emphasis is given to current problems which may hinder a successful application of ion implantation in the fabrication of GaN- based devices.
Original language | English |
---|---|
Title of host publication | III-NITRIDE BASED SEMICONDUCTOR ELECTRONICS AND OPTICAL DEVICES and THIRTY-FOURTH STATE- OF-THE-ART- PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXIV) Proceedings of the International Symposia |
Editors | F. Ren, D. N. Buckley, S. N. G. Chu, S. J. Pearton |
Publisher | Electrochemical Society, Inc. |
Pages | 150-160 |
Number of pages | 11 |
Volume | 2001-1 |
ISBN (Electronic) | 1-56677-307-5 |
ISBN (Print) | 1-56677-307-5 |
Publication status | Published - 2001 |
Event | 199th Electrochemical Society (ECS) Meeting: III-Nitride-Based Semiconductor Electrode and Optical Devices and State-of-the-Art Program on Compound Semiconductors XXXIV - Renaissance Washington DC Hotel, Washington DC, United States Duration: 25 Mar 2001 → 30 Mar 2001 https://www.electrochem.org/199#:~:text=199th%20ECS%20Meeting.%20Washington,%20D.C.,%20March%2025-30,%202001,%20Renaissance%20Washington |
Publication series
Name | Electrochemical Society Proceedings Volume 2001-1 |
---|---|
Publisher | IOP Science |
ISSN (Print) | 2576-1579 |
Conference
Conference | 199th Electrochemical Society (ECS) Meeting |
---|---|
Country/Territory | United States |
City | Washington DC |
Period | 25/03/01 → 30/03/01 |
Internet address |